blf6g27 10 112 mosfet transistor

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 130 mA 2.5GHz ~ 2.7GHz 19dB 2W CDFM2

Model Number:BLF6G27-10,112

RF Mosfet 28 V 130 mA 2.5GHz ~ 2.7GHz 19dB 2W CDFM2

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 130 mA 2.5GHz ~ 2.7GHz 19dB 2W CDFM2

Model Number:BLF6G27-100,112

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27-100,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:Original

BLF6G27-100,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency - Gain - Voltage - Test 28V Current Rating 29A Noise Figure - Current - Test 900mA Power - Output 14W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G27-100,112...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Model Number:BLF6G27-10G,112

RF Mosfet 28 V 130 mA 2.5GHz ~ 2.7GHz 19dB 2W CDFM2

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Brand Name:AOS

Model Number:AO4441

Place of Origin:original

...MOSFET Power Electronics FETs MOSFETs Transistors P-Channel 60V 4A Surface Mount Package 8-SOIC FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 4A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 100mOhm @ 4A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10...

Brand Name:Diodes

Model Number:DMT6009LSS-13

Place of Origin:CHINA

...MOSFET N Channel 60V 10.8A Transistors FETS MOSFET N-CH 60V 10.8A 8SO T&R 2 Discrete Semiconductor DMT6009LSS-13 Specification : Part number DMT6009LSS-13 Category Discrete Semiconductor Products 　 Transistors - FETs, MOSFETs - Single Mfr Diodes Incorporated Series - Package Tape & Reel (TR) Part Status Active FET Type N-Channel Technology MOSFET...

Brand Name:Original Factory

Model Number:TW045N120C,S1F

Place of Origin:CN

...: TW045N120C,S1F Vds - Drain-Source Breakdown Voltage: 1.2 KV Mounting Style: Through Hole Vgs - Gate-Source Voltage: - 10 V, + 25 V Vgs(Th) (Max) @ Id: 5V @ 1mA Id - Continuous Drain Current: 20 A Characteristics Curves​

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial ...

Brand Name:Original Factory

Model Number:XC7K410T-3FFG676E

Place of Origin:China

Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Real 6-input look-up tables (LUTs) Memory capability within the LUT Register and shift register functionality Product Specifications Part Number XC7K410T-3FFG676E Moisture Sensitive: Yes Number of Logic Array Blocks - LABs: 31775 LAB Operating Supply Voltage: 1.2 V to 3.3 V Maximum Current: 10...

Brand Name:RKENS

Model Number:RS-917

Place of Origin:China

... AC220V/110V 60Hz/50Hz Speed 4000-8000 PCS/H Packing size and weight 71x71x58CM, About 90kG Suitable Can work for 10-16mm E-caps, with

Model Number:IRFP6227

Place of Origin:United States

Brand Name:Original

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Brand Name:MICROCHIP

Model Number:PIC24HJ128GP202-I/MM

Place of Origin:original

PIC24HJ128GP202-I/MM Chipscomponent Electronic Components IC Chips PIC24HJ128GP202-I/MM Micro Integrated Circuit New And Original QFN-28_6x6x065P 16-bit microcontroller - MCU 16B MCU 28LD128KB DMA 40MIPS Category Integrated Circuits (ICs) Mfr Analog ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

...MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:Canyi

Model Number:10N60

Place of Origin:Guangdong, China

...mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche tested to make sure quality before ship This 10N60 improved rate of change of voltage over time Mosfet...

Brand Name:original

Model Number:TK30E06N1,S1X

Place of Origin:original

...Transistors MOSFET Through Hole . Features (1) Low drain-source on-resistance: RDS(ON) = 12.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (3) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 0.2 mA) Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor...