blf6g10 45 135 mosfet transistor

Model Number:BLF6G10-45,135

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G10-45,135 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Model Number:BLF6G10-45,135

RF Mosfet 28 V 350 mA 922.5MHz ~ 957.5MHz 22.5dB 1W CDFM2

Model Number:BLF6G10-45,135

RF Mosfet 28 V 350 mA 922.5MHz ~ 957.5MHz 22.5dB 1W CDFM2

Place of Origin:Original

...45,135 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.7GHz Gain 18dB Voltage - Test 28V Current Rating 20A Noise Figure - Current - Test 350mA Power - Output 7W Voltage - Rated 65V Package / Case SOT-608A Supplier Device Package CDFM2 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G27-45,135...

Brand Name:Anterwell

Model Number:BC847C

Place of Origin:original factory

NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking Package Code BC846AT/...

Brand Name:Original Factory

Model Number:SCTWA35N65G2V

Place of Origin:CN

...MOSFET Transistors Product Description Of SCTWA35N65G2V SCTWA35N65G2V is Silicon carbide Power MOSFET 650 V, 55 mOhm 45 A in an TO-247 long leads package. Specification Of SCTWA35N65G2V Part Number SCTWA35N65G2V Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 650 V Id - Continuous Drain Current: 45...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 350 mA 2.7GHz 18dB 7W CDFM2

Brand Name:onsemi

Model Number:FQD2N90TM

Place of Origin:Multi-origin

FQD2N90TM MOSFET Power Electronics Product Description: The FQD2N90TM MOSFET Power Electronics is a high-power, high-performance device ideal for a wide range of applications. This device features low on-resistance, fast switching speed, and high current ...

Model Number:BC847C

Place of Origin:original factory

NPN general purpose Transistor BC847AT/BT/CT FEATURES Ideally suited for automatic insertion. For switching and AF amplifier application. APPLICATIONS General purpose switching and amplification. ORDERING INFORMATION Type No. Marking Package Code BC846AT/...

Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Brand Name:Original brand

Model Number:A3G20S250-01SR3

Place of Origin:Original

Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVMFS6H818NL

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Brand Name:Original

Model Number:IRLML2502TRPBF

Place of Origin:Original

MOSFET IRLML2502TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.2 A Rds On - Drain-Source Resistance: 45...

Brand Name:CJ

Model Number:CJ2312

Place of Origin:CN

CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ...

Brand Name:Nexperia

Model Number:BUK7K35-60EX

BUK7K35-60EX TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Arrays Mfr Nexperia USA Inc. Series Automotive, AEC-Q100 Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel Product Status Active Technology MOSFET (Metal ...

Brand Name:Infineon

Model Number:BSP149H6327XTSA1

MOSFET N-Ch 200V 660mA SOT-223-3 Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-4 Transistor Polarity: N-Channel Number of ...

Brand Name:INFINEON

Model Number:IRLML2502TRPBF

...: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 4.2 A Rds On - Drain-Source Resistance: 45 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1

Brand Name:TOSHIBA

Model Number:TK7A90E,S4X

...��道模式: Enhancement 商标名: MOSVIII 封装: Tube 商标: Toshiba 配置: Single 下降时间: 15 ns 高度: 15 mm 长度: 10 mm 产品类型: MOSFETs 上升时间: 20 ns 系列: TK7A90E 工厂包装数量: 50 子类别: Transistors 晶体管类型:

Brand Name:INFINEON

Model Number:IPD100N04S402ATMA1

Place of Origin:original

ISO9001.pdf Application: IPD100N04S402ATMA1 is an N-channel MOSFET transistor commonly used in fields such as DC power switches, motor control, lighting control, and electronic transformers. Conclusion: IPD100N04S402ATMA1 has the characteristics of low ...