blf1822 10 power mosfet

Model Number:BLF1822-10,112

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF1822-10,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ...

Model Number:BLF1822-10,112

RF Mosfet 26 V 85 mA 2.2GHz 13.5dB 10W SOT467C

Categories:RF JFET Transistors

Country/Region:china

The BLF1822-10,112,from Ampleon USA Inc.,is RF JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:BSS84L

High Power MOSFET BSS84L Single P-Channel Logic Level Power MOSFET -50 V, -130mA, 10Ω [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:FAIRCHILD

Model Number:FDS5690

Place of Origin:Original

... Fast switching speed. • High performance trench technology for extremely low RDS(ON). • High power and current handling capability General Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that

Place of Origin:Malaysia

Brand Name:IXYS

Model Number:IXFN27N80

... FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ ...

Model Number:C2M0045170D

...Power MOSFET with N-Channel Enhancement Mode. It is designed for power applications requiring high performance and efficiency.Product Attributes Brand: Fuxinsemi Material: Silicon CarbideTechnical Specifications Parameter Conditions Typical Value Unit Capacitance (Ciss) TJ = 25 C, VAC = 25 mV, f = 1 MHz 1 pF Capacitance (Coss) TJ = 25 C, VAC = 25 mV, f = 1 MHz 10...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:Original Factory

Model Number:SCTWA60N120G2-4

Place of Origin:CN

...Power MOSFET Transistors Product Description Of SCTWA60N120G2-4 SCTWA60N120G2-4 N-Channel Power MOSFET is a very high voltage N-channel Power MOSFET designed using the ultimate MDmesh K6 technology. Specification Of SCTWA60N120G2-4 Part Number SCTWA60N120G2-4 Vgs - Gate-Source Voltage: - 10...

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Model Number:JH-RYF-7KWA220-A10K-Q

Brand Name:Jianhong

Place of Origin:China

... requirements. 3.Forced air-cooling system; the 15050 fan provides cooling via a front-to-rear airflow; wide operating temperature range of –10 to 50 °C;

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Brand Name:HANS

Place of Origin:Guangdong, China

Model Number:M16

...10.95 inch Android 15 tablet built for business, education, retail and field service. A 1920x1200 IPS incell display with anti-fingerprint capacitive multi-touch delivers crisp, comfortable viewing, while the MTK G99 octa-core processor with 8GB RAM and 128GB ROM keeps multitasking smooth. Housed in a slim 7.6mm metal body and powered by a 7000mAh battery, it is a dependable all-day work companion. Key Selling Points 10

Model Number:BP290

Brand Name:Fluke

...Fluke 120B Series Industrial ScopeMeters, serving as a reliable power source for field maintenance engineers. Featuring a rugged black housing with clear white specification markings and a built-in "TEST&...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power...

Model Number:ACPL-339J-000E

...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power...