bcx56 10 npn medium power transistors

Brand Name:CJ

Model Number:BCX56-10

Place of Origin:CN

BCX56-10# 80V 1A 1.25W NPN medium power transistors SOT89 Features ■ High current ■ Two current gain selections ■ High power dissipation capability Applications ■ Linear voltage regulators ■ Low-side switches ■ MOSFET drivers ■ Amplifiers ...

Model Number:BCX56-16,115

...BCX56 series comprises NPN medium power transistors designed for surface-mounting applications. Housed in a SOT89 (SC-62) plastic package, these transistors offer high collector current capability (IC and ICM), multiple current gain selections, and high power dissipation. They are suitable for a range of applications including linear voltage regulators, MOSFET drivers, low-side switches, battery-driven devices, power

Brand Name:Anterwell

Model Number:BCX56

Place of Origin:original factory

...NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and Storage Temperature Range:65 to +150°C APPLICATIONS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54 BCX55 BCX56...

Model Number:BCX56

Place of Origin:original factory

...NPN SILICON PLANAR MEDIUM POWER TRANSISTORS BCX56 DESCRIPTION Collector-Base Voltage:100V Collector-Emitter Voltage:80V Emitter-Base Voltage:5V Peak Pulse Current:2A Continuous Collector Current:1A Power Dissipation at Tamb=25°C:1W Operating and Storage Temperature Range:65 to +150°C APPLICATIONS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL BCX54 BCX55 BCX56...

Brand Name:CANYI

Model Number:2222A

Place of Origin:Guangdong, China

MPS2222A MPS2222 2222A TO-92 NPN mosfet power transistor Choose Canyi to get more benefit: Supplying to Changdian, Xinghai, Tuofeng, Leshan, Roma and Anshi Competitive price and save your time Over 10 years work experience technical service team Mix order ...

Place of Origin:Original

Brand Name:Original

Model Number:2SD882

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Model Number:PBSS4160T,215

Place of Origin:CN

...NPN low VCEsat transistor in a SOT23 plastic package PNP complement to PBSS5160T FEATURES • Low collector-emitter saturation voltage VCEsat • High collector current capability IC and ICM • High efficiency, reduces heat generation • Reduces printed-circuit board area required • Cost effective replacement for medium power transistor BCP55 and BCX55. APPLICATIONS • Major application segments: – Automotive 42 V power...

Brand Name:Hua Xuan Yang

Model Number:12P03C2

Place of Origin:ShenZhen China

...Npn Power Transistor , Mosfet Driver Circuit Using Transistor Npn Power Transistor Applications DC to DC converters Low voltage motor controllers These are widely used in the low voltage switches which are less than the 200V Npn Power Transistor Description -30V/-50A R DS(ON) = 10...

Brand Name:Nexperia

Model Number:BCX54-10-QX

Place of Origin:China

...10-QX andnbsp; 1. General description andnbsp;NPN medium power transistors in a SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. 2. Features and benefits andbull; High collector current capability IC and ICM andbull; Three current gain selections andbull; High power...

Brand Name:Diode Triode Transistor

Model Number:TIP137

Place of Origin:USA

...NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor...

Brand Name:Analog Devices Inc.

Model Number:HMC442LC3BTR

Place of Origin:Multi-origin

... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low noise -

Brand Name:Texas Instruments

Model Number:ESDS312DBVR

Place of Origin:N/S

NPN PNP Transistor Texas Instruments/TI ESDS312DBVR ECAD Module PCB Symbol,Footprint & 3D Model Supply and Demand Status Limited Popularity Medium Fake Threat In the Open Market 58 pct. Quantity per package 3000 HTSUS 8541.10.0080 ECCN EAR99 REACH Status ...

Model Number:BCX56-16

Place of Origin:Guangdong, China

Brand Name:Original

... or amplification needs? Look no further than the BCX56-16 NPN silicon AF transistors. These transistors are complementary to the BCX53-16 PNP transistor and are used in AF driver and output stages, making them perfect for a variety of applications. Not

Model Number:BCX56

Brand Name:Original

Place of Origin:US

Product Description Product Detail Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1A Voltage - Collector Emitter Breakdown (Max) 80V Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA Current - Collector ...

Brand Name:Nexperia USA Inc

Model Number:PBHV8540X,115

...Transistor Discrete Semiconductors PBHV8540X PBHV8540 Nexperia Bipolar (BJT) Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power...

Brand Name:Nexperia USA Inc.

Model Number:PBHV8540X,115

Place of Origin:CHINA

...Transistor 500V 0.5 A NPN A NPN high-voltage low VCEsat (BISS) transistor Discrete Semiconductor Products-A NPN high-voltage low VCEsat (BISS) transistor Description: NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power...

Brand Name:onsemi

Model Number:BCP56-16T1G

Place of Origin:China

.... The device is housed in the SOT−223 package, which is designed for medium power surface mount applications. PRODUCT PROPERTIES Product Status Active Transistor Type NPN Current - Collector (Ic) (Max) 1 A Voltage - Collector Emitter Breakdown (Max) 80 V

Brand Name:onsemi

Model Number:MJD122T4G

Place of Origin:USA

... Voltage VEBO: 5 V Collector- Base Voltage VCBO: 100 V Maximum DC Collector Current: 8 A Maximum Collector Cut-off Current: 10 uA Pd - Power Dissipation: 20 W Mounting Style: SMD/SMT Package / Case: TO-252-3

Brand Name:TOSHIBA

Model Number:2SC5171

Place of Origin:Original Factory

... VCB = 180 V, IE = 0 ― ― 5.0 μA Emitter cut-off current IEBO VEB = 5 V, IC = 0 ― ― 5.0 μA Collector-emitter breakdown voltage V (BR) CEO IC = 10 mA, IB = 0

Place of Origin:PHILIPPINE

Brand Name:IXYS

Model Number:IXA70I1200NA

Quick Detail: XPT IGBT Single IGBT Description: ● AC motor drives ● Solar inverter ● Medical equipment ● Uninterruptible power supply ● Air-conditioning systems ● Welding equipment ● Switched-mode and resonant-mode power supplies ● Inductive heating, ...