5v mosfet

Brand Name:KEC

Model Number:KIA7805AF

Place of Origin:CHINA

KIA7805AF 5V THREE TERMINAL POSITIVE VOLTAGE REGULATORS Internal Thermal Overload Protection FEATURES ・Internal Thermal Overload Protection. ・Internal Short Circuit Current Limiting. ・Output Current in Excess of 1A. ・Satisfies IEC-65 Specification. (...

Brand Name:BigFlier

Model Number:F-14S-100A-C

Place of Origin:ShenZhen

HV 14S 100A Intelligent Brushless Controller RC Car ESC For Traxxas Basic information: Voltage working Current Size(mm) weight(g) BEC (Volts/Amps) Box Programming support Computer Programming support Firmware update 4-14S 50A 106*37*26 260g OPTO Yes Yes ...

Brand Name:onsemi

Model Number:FDC637AN

Place of Origin:original

...) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 24mOhm @ 6.2A, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 16 nC @ 4.5 V Vgs (Max) ±8V Input Capacitance (Ciss) (Max)

Brand Name:ON

Model Number:MC74ACT08DR2G

Place of Origin:original

...Mosfet Driver SOIC-14 Logical type: and gate Number of channels: 4 Power supply voltage: 4.5V~5.5V Static current (Max.) : 4uA Max propagation delay: 9ns@5V,50pF Stats Parameter value catalogue Logic gate Owning series of logic circuits 74ACT Logical type And gate Number of channels 4 Supply voltage 4.5V~5.5V...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA420NZ

High Power MOSFET FDMA420NZ N-Channel PowerTrench^® MOSFET, 2.5V Specified, 20V, 5.7A, 30mΩ High Power MOSFET FDMA420NZ N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 5.7A, 30mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus...

Brand Name:Hua Xuan Yang

Model Number:AP8205S

Place of Origin:ShenZhen China

...Mosfet Power Transistor With High Switching Speed Mosfet Power Transistor Description: The AP8205S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 20V,ID = 6A RDS(ON) < 20.5.mΩ @ VGS=4.5V RDS(ON) < 27.mΩ @ VGS=2.5V

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

FDC608PZ MOSFET -20V P-Channel 2.5V PowerTrench MOSFET Manufacturer: onsemi Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SSOT-6 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8205A

...23-6L Plastic-Encapsulate MOSFETS Dual N-Channel MOSFET General Description VDSS= V ID= 6.0 A z 20 G1 6 D1,D2 5 G2 4 z RDS(on) < Ω@V = 4.5V 25m GS z RDS(on) < Ω@V = 2.5V 32m GS 1 2 3 S1 D1,D2 S2 FEATURE z TrenchFET Power MOSFET z Excellent RDS(on) z Low ...

Brand Name:Anterwell

Model Number:TC4420CPA

Place of Origin:original factory

...MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV ■ Matched Rise and Fall Times ...................... 25nsec ■ High Peak Output Current ......................... 6A Peak ■ Wide Operating Range .......................... 4.5V...

Place of Origin:US

Brand Name:Original

Model Number:SI2399DS-T1-GE3

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V Rds On (Max) @ Id, Vgs 34 mOhm @ 5.1A, 10V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 20nC @ 4.5V...

Brand Name:UCHI

Model Number:SGM61020

Place of Origin:Dongguan China

Switch Mode Power ICs 2.5V To 5.5V, 2A, High EfficiencySynchronous Buck Converter The SGM61020 is a high efficiency synchronous BuckDC/DC converter with 2A output current capability andadjustable output voltage. The input supply voltage is inthe range of ...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V...

Brand Name:CANYI

Model Number:AO3400

Place of Origin:Guangdong, China

...mosfet power transistor NPN MOSFET A09T n channel transistor Features: Model Number:AO3400 Type:MOSFET Package Type:Surface Mount Product Name:AO3400 Other name:AO3400A Marking:A09T FET Type:N-Channel Drain to Source Voltage (Vdss):30V Current - Continuous Drain (Id) 25°C5.8A (Ta) Drive Voltage (Max Rds On, Min Rds On):2.5V, 10V Vgs(th) (Max) Id:1.45V 250uA Gate Charge (Qg) (Max) Vgs: 7nC 4.5V...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

...(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:Original

Model Number:IRLML2244TRPBF

Place of Origin:Original

MOSFET IRLML2244TRPBF Chips Diode Transistor Integrated Circuits PRODUCT DESCRIPTION MOSFET P-CH 20V 4.3A SOT23 PRODUCT PROPERTIES Mfr Infineon Technologies Series HEXFET Product Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20 V Current - Continuous Drain (Id) 4.3A (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V Rds On (Max) @ Id, Vgs 54mOhm @ 4.3A, 4.5V...

Brand Name:onsemi

Model Number:FDC6321C

Place of Origin:United States

...Mosfet Array 25V 680mA, 460mA 700mW Surface Mount SuperSOT™-6 Datasheet:FDC6321C Category FET, MOSFET Arrays Mfr onsemi Product Status Active Technology MOSFET (Metal Oxide) Configuration N and P-Channel FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 25V Current - Continuous Drain (Id) @ 25°C 680mA, 460mA Rds On (Max) @ Id, Vgs 450mOhm @ 500mA, 4.5V Vgs(th) (Max) @ Id 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 2.3nC @ 5V

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:SI6926DQ

...5V Specified PowerTrench MOSFET Description: This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3.5V,

Model Number:TC4420CPA

Place of Origin:original factory

...MOSFET DRIVERS FEATURES ■ Latch-Up Protected ............ Will Withstand >1.5A Reverse Output Current ■ Logic Input Will Withstand Negative Swing Up to 5V ■ ESD Protected ..................................................... 4kV ■ Matched Rise and Fall Times ...................... 25nsec ■ High Peak Output Current ......................... 6A Peak ■ Wide Operating Range .......................... 4.5V...

Brand Name:Micro chip

Model Number:TC4427CPA

Place of Origin:Shenzhen, China

... and fall times when charging and discharging the gate of a MOSFET. These devices are highly latch-up resistant under any conditions within their power and voltage ratings. They are not subject to damage when up to 5V of noise spiking (of either polarity)