20ma silicon dual gate mosfet

Brand Name:PHILIPS

Model Number:BF981

Place of Origin:Netherland

Double gate N channel field effect Cross tube radio frequency audion package To-50 Silicon N - Channel Dual Gate Mos -Fet 20V 20mA 225mW Descriptions: Depletion type fieldeffect transistor in a plastic X-package with source and substrate interconnected, ...

Brand Name:Original Factory

Model Number:DF11MR12W1M1PB11BPSA1

Place of Origin:CN

...Channel (Dual) MOSFET Arrays. ​Specification Of DF11MR12W1M1PB11BPSA1 Part Number DF11MR12W1M1PB11BPSA1 Technology Silicon Carbide (SiC) Current - Continuous Drain (Id) @ 25°C 50A (Tj) Gate Charge (Qg) (Max) @ Vgs 124nC @ 15V Input Capacitance (Ciss)

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:ONSEMI

Model Number:BD135

Place of Origin:Original

BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ...

Brand Name:INFINEON

Model Number:FF300R12KT4

Place of Origin:HUNGARY

IGBT Module FF300R12KT4 Kollektor-Emitter-Sättigungsspannung Collector-emittersaturationvoltage IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V IC = 300 A, VGE = 15 V VCE sat 1,75 2,05 2,10 2,15 V V V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung...

Model Number:D2010UK

Place of Origin:Malaysia

Brand Name:KAIGENG

D2010UK N/A Electronic Components IC MCU Microcontroller Integrated Circuits D2010UK #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:IT

Model Number:IRF630NSTRLPBF

Place of Origin:original

... Rectifier Corporation. It is optimized for low voltage, high speed switching applications. This MOSFET is housed in a TO-220AB package. Features: • Low RDS(on) • Low gate charge • Low input and output capacitance • Avalanche energy rated •

Brand Name:Hua Xuan Yang

Model Number:AP50N10D

Place of Origin:ShenZhen China

... DC-DC converters Motor control Automotive applications Dual Mosfet Switch Description: The AP50N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for

Brand Name:TI

Model Number:CSD75207W15

Place of Origin:Philippines

... Category Power MOSFET Configuration Dual Process Technology NexFET Channel Mode Enhancement Channel Type P Number of Elements per Chip 2 Maximum Gate Source Voltage (V) -6 Maximum Gate Threshold Voltage (V) 1.1 Maximum Continuous Drain Current (A) 3.9

Model Number:IX4424

Place of Origin:Guangdong, China

Brand Name:Original

...Gate Driver Achieve Efficient and Reliable Dual MOSFET DRVR Bitmain Power Supply Replacement with the IX4424NTR IX4424N Revamp your electronics project with the High-Speed IX4424NTR IX4424N Gate Driver, the perfect replacement for Bitmain APW7, APW8, and APW9 power supplies. This dual MOSFET DRVR system is designed for high-speed and low-side gate...

Brand Name:TI

Model Number:ULN2003V12PWR

Place of Origin:CN

...Gate Drivers 5.7kVrms 4A/6A Dual-channel Isolated Gate Driver Product Overview The UCC21521 is an isolated dual-channel gate driver with 4-A source and 6-A sink peak current. It is designed to drive power MOSFETs, IGBTs, and SiC MOSFETs up to 5-MHz with best-in-class propagation delay and pulse-width distortion. Key Features Universal: dual low-side, dual...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY9926A

HXY9926A 20V Dual N-Channel MOSFET General Description The HXY9926A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable...

Brand Name:Infineon

Model Number:IRF7342TRPBF

Place of Origin:China

... Dual 55V 6.5A MOSFET Pair with 50mandOmega; RDS(on) Fast Switching Low Gate Charge SOIC-8 Package ESD Protected andamp; Ideal for DC-DC/Synchronous Rectification andnbsp; Features Generation V Technology Ultra Low On-Resistance Dual P Channel MOSFET ...

Brand Name:STMicroelectronics

Model Number:PM8834

Gate Drivers 4 A dual low side MOSFET Driver Product Attribute Attribute Value Select Attribute Manufacturer: STMicroelectronics Product Category: Gate Drivers RoHS: Details Product: IGBT, MOSFET Gate Drivers Type: Low-Side Mounting Style: SMD/SMT Package...

Brand Name:JUYI

Model Number:JY2605M

Place of Origin:China

...density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other ...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Model Number:UCC37324DR

Place of Origin:Guangdong, China

Brand Name:original

integrated circuits UCC37324DR 37324 SOP-8 full bridge driver ic chip Products Description: 1. UCC37324DR FET drive SOIC-8 2. Dual 4-A Peak high-speed low-side Power MOSFET Drivers Dual 4-A Peak High-speed low-side power-MOSFET Drivers 3. The UCC37323/4/5 ...

Model Number:AOK50B65GL1

...Silicon Carbide (SiC) Power MOSFET from Alpha & Omega Semiconductor, engineered with proprietary SiC MOSFET technology. It offers low conduction and switching losses due to its low RDS(ON), fast switching speeds, low gate resistance (RG), and low capacitance. Optimized for a gate drive voltage of 15 V, this MOSFET...

Brand Name:ON Semiconductor

Model Number:FDS8984

Place of Origin:CHINA

...Mosfet Array 2 N-Channel (Dual) 30V 7A 1.6W Surface Mount 8-SOIC FET Type 2 N-Channel (Dual) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs 23mOhm @ 7A, 10V Vgs(th) (Max) @ Id 2.5V @ 250µA Gate...

Brand Name:Star merter

Model Number:CYYZ3051SAY

Place of Origin:China

... transmitter uses monocrystalline silicon resonant sensor technology. The double-flange capillary structure realizes mechanical isolation and thermal isolation, which can cope with complex corrosive ...