160v silicon power transistor

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MJ21194

MJ21194 is a COMPLEMENTARY SILICON POWER TRANSISTORS . Part NO: MJ21194 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products...

Model Number:2SD882PU

... transistor offers robust performance with high current handling capabilities and defined saturation voltages, making it suitable for power switching and amplification circuits. Product Attributes Type: NPN Silicon Power Transistor Current Gain Groups:

Brand Name:ONSEMI

Model Number:MJ15025G

Place of Origin:Mexico

Complementary Silicon Power Transistors Mosfet Semiconductor MJ15025G PNP − MJ15023, MJ15025* Silicon Power Transistors The MJ15023 and MJ15025 are PowerBase power transistors designed for high power audio, disk head positioners and other linear ...

Categories:RF Transistors

Country/Region:china

...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

...Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 310 V VCEO Collector-Emitter Voltage 305 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 200 mA ICM Collector Current -Pulsed 500 mA PC Collector Power...

Brand Name:ONSEMI

Model Number:MMBT4403LT1G

Place of Origin:Original

MMBT4403LT1G Switching high power mosfet transistors , PNP silicon power transistors High Voltage Transistors NPN Silicon ORDERING INFORMATION Device Order Number Package Type Shipping† MMBT4403LT1 SOT−23 (Pb−Free) 3,000 / Tape & Reel MMBT4403LT1G SOT−23 (...

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

...IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:SAIKELI

Model Number:MJE3055T

Place of Origin:China

...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor...

Place of Origin:US

Brand Name:Original

Model Number:2N5551

...t Status Obsolete Transistor Type NPN Current - Collector (Ic) (Max) 800mA Voltage - Collector Emitter Breakdown (Max) 30V Vce Saturation (Max) @ Ib, Ic 1.6V @ 50mA, 500mA DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V Power - Max 500mW Mounting...

Brand Name:Infineon Technologies

Model Number:IRF3205PBF

Place of Origin:Original

...Silicon Npn Power Transistors 55V 110A 8.0mΩ Power MOSFET Npn Power Transistor Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Brand Name:Original Factory

Model Number:MSC060SMA070B4

Place of Origin:CN

...Transistors in a TO-247 4-lead package with a source sense. Specification Of MSC060SMA070B4 Part Number: MSC060SMA070B4 Technology: SiC Mounting Style: Through Hole Package / Case: TO-247-4 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds -

Brand Name:Huixin

Model Number:MMBT3906 SOT-23

Place of Origin:China

Silicon SMD Transistor PNP Surface Mount Transistor MMBT3906 SOT-23 MMBT3906 SOT-23 PNP Surface Mount Transistor MMBT3906 SOT-23 Datasheet.pdf FEATURES Complementary Type The NPN Transistor MMBT3904 is Recommended Epitaxial Planar Die Construction MARKING...

Brand Name:Original brand

Model Number:IGT60R070D1ATMA1

Place of Origin:Original

... • Superior commutation ruggedness • Qualified for industrial applications according to JEDEC Standards (JESD47 and JESD22) Benefits • Improves system efficiency • Improves power density •

Brand Name:ON

Model Number:MJE15028G

Place of Origin:original

MJE15028G Chipscomponent Electronic Components IC Chips MJE15028G High Power MOSFET electronic chip brand new original TO-220(TO-220-3) Bipolar transistor - Bipolar junction transistor (BJT) 8A 120V 50W NPN Category Integrated Circuits (ICs) Mfr Analog ...

Brand Name:JC

Model Number:OSPF18N50C

Place of Origin:Jiangxi, China

...Power Transistor / Plastic P Channel Transistor Mosfet Power Transistor Features Low gate charge Low Rdson(typical 5.5mΩ) Fast switching 100% avalanche tested Improved dv/dt capability RoHS product Mosfet Power Transistor Applications High efficiency switch mode power supplies Power...

Brand Name:Original

Model Number:FQPF18N60C

...Power Transistor for Your Electronic Projects Unleash the Power of FQPF18N60C - Ideal for High Voltage and High Current Applications Looking for a power transistor that can handle high voltage and high current applications? Look no further than the FQPF18N60C. This powerful and reliable transistor...