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All 128m ddr3 synchronous dram wholesalers & 128m ddr3 synchronous dram manufacturers come from members. We doesn't provide 128m ddr3 synchronous dram products or service, please contact them directly and verify their companies info carefully.
| Total 43 products from 128m ddr3 synchronous dram Manufactures & Suppliers |
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Brand Name:SKHYINX Model Number:H5TC2G63GFR-PBA Place of Origin:TAIWAN ... Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK Hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Brand Name:Micron Technology Inc. Model Number:MT41K256M8DA-107:K MT41K256M8DA-107:K High-Performance 8GB DDR3 Synchronous DRAM Flash Memory Chips MT41K256M8DA-107:K Flash Memory Chips Product Description: The MT41K256M8DA-107:K Flash Memory Chips is a high-performance memory designed for embedded applications. It offers... |
Shenzhen Sai Collie Technology Co., Ltd.
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Model Number:MT48LC32M8A2 Place of Origin:original factory ... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:Original Factory Model Number:H9HCNNN8KUMLHR-NME Place of Origin:CN H9HCNNN8KUML-HRNME Memory IC Chip Low Power 8Gb LPDDR4 Synchronous DRAM Memory IC Product Description Of H9HCNNN8KUML-HRNME H9HCNNN8KUMLHR-NME is low power 8Gb LPDDR4 synchronous DRAM memory in BGA-200 package. Specifications Of H9HCNNN8KUML-HRNME Memory ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Anterwell Model Number:MT48LC32M8A2 Place of Origin:original factory ... Features • PC100- and PC133-compliant • Fully synchronous; all signals registered on positive edge of system clock • Internal pipelined operation; column address can be changed every clock cycle • Internal banks for ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:MICRON Model Number:MT48LC4M16A2TG Place of Origin:Original ...Synchronous Dram MICRON Original Package TSOP Tray MT48LC16M4A2 – 4 Meg x 4 x 4 banks GENERAL DESCRIPTION The Micron® 64Mb SDRAM is a high-speed CMOS, dynamic random-access memory containing 67,108,864 bits. It is internally configured as a quadbank DRAM with a synchronous... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Place of Origin:United States #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:0;margin-left:0;width:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:ISSI Model Number:IS42S32200L-7BLI Place of Origin:CN ...DRAM 512K Bits SYNCHRONOUS Dynamic RAM IS42S32200L-7BLI FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to a positive clock edge • Internal bank for hiding row access/precharge OVERVIEW JUNE 2023 ISSI's 64Mb Synchronous DRAM IS42/45S32200L is organized as 524,288 bits x 32-bit x 4-bank for improved performance. The synchronous DRAMs... |
Shenzhen Filetti Technology Co., LTD
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Brand Name:CISCO Model Number:ISR4221/K9 Place of Origin:CHINA ... service-module slots 0 NIM slots 2 OIR (all I/O modules) No Onboard ISC slot No Default memory double-data-rate 3 (DDR3) error-correction-code (ECC) DRAM (Combined control/services/data planes) 4 GB Maximum memory DDR3 ECC DRAM |
LonRise Equipment Co. Ltd.
Shanghai |
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Brand Name:ISSI Model Number:IS42S16400J-7TLI Place of Origin:Original Factory ... DRAMs achieve high-speed data transfer using pipeline architecture. All inputs and outputs signals refer to the rising edge of the clock input. FEATURES • Clock frequency: 200, 166, 143, 133 MHz • Fully synchronous; all signals referenced to |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Micron Technology Model Number:MT41K64M16TW-107 IT:J Place of Origin:Original MT41K64M16TW-107 IT:J Memory IC DRAM DDR3 933 MHz 1Gbit 63mA 64Mx16 FBGA-96 Specifications Product Attribute Attribute Value Mounting Style: SMD/SMT Data Bus Width: 16 bit Organization: 64 M x 16 Memory Size: 1 Gbit Maximum Clock Frequency: 933 MHz Supply ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:original Model Number:DDR3 4G 1600 laptop Place of Origin:China ...DDR3 1600MHz 4GB SO-DIMM 240pin Memory Ram Module for LAPTOP Product Specifications Product Name DDR3 4GB for laptop Bandwidth 1600mt/s Memory type SODIMM Timing 11-11-11-28 Memory function Non-ECC unbuffered memory Data interface 204 pin Bit width 64 Bits Speed PC3-10600/PC3-12800 Componets Configuration (128m... |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
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Brand Name:TCSUNBOW DDR3 Memory SODIMM Series Model Number:DDR3 Memory SODIMM Series ... Temperature Range: -40-75℃; Description Cost-Effective Upgrade: Whether you're upgrading an older system or expanding your current setup, TCSUNBOW RAM DDR3 memory modules provide the reliability and efficiency you need for everyday computing tasks. |
Shenzhen TCsunbow Technology Co.,Ltd.
Guangdong |
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Brand Name:Winbond Electronics Model Number:W631GG8KB-11 Product Details GENERAL DESCRIPTION The W631GG6KB is a 1G bits DDR3 SDRAM, organized as 8,388,608 words x 8 banks x 16 bits. This device achieves high speed transfer rates up to 1866 Mb/sec/pin (DDR3-1866) for various applications. W631GG6KB is sorted int... |
Sanhuang electronics (Hong Kong) Co., Limited
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Model Number:AS4C256M8D3LC-12BIN AS4C256M8D3LC-12BIN Memory DRAM FBGA-78 Memory IC AS4C256M8D3LC in stock AS4C256M8D3LC-12BINTR Description DRAM DDR3 - 256M X 8 Mfr. Part # AS4C256M8D3LC-12BIN AS4C256M8D3LC-12BINTR 2Gb AS4C256M8D3LC 78 ball FBGA PACKAGE New part electronic components: ... |
LU'S TECHNOLOGY CO., Ltd.
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Categories:Microchip Integrated Circuit Country/Region:china MT40A2G8SA-062E:F MT40A2G8SA-062E IT:F Synchronous Dynamic Random Access Memory IC D8CJW MT40A2G8SA 1.2V DRAM DDR4 16Gbit 2G x 8bit 1.6 GHz FBGA78 MT40A2G8SA-062E:F MT40A2G8SA-062E IT:F For more similar DRAMs : MT40A1G16TB-062E:F MT41K256M16TW-107:P ... |
HK NeoChip Technology Limited
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Brand Name:KINGECH Model Number:WF-200 Place of Origin:China ... between Android/IOS/Windows system HD 1.3 DDR Flash Power DDR3 128MB NOR flash 128M Bytes Power Comsumption Main unit ≤ 750mA@5V Operation System OS Linux 3.0.8 System Supported Android Android 4.4 and above IOS IOS8 and above ... |
SHENZHEN KINGTECH INDUSTRY CO.,LTD
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Brand Name:MICRON Model Number:MT25QL128ABA1ESE-0SIT Place of Origin:CHINA ...128M Architecture Sectored Boot Block No Block Organization Symmetrical Address Bus Width (bit) 1 Sector Size 64Kbyte x 256 Page Size 256byte Number of Bits/Word (bit) 1/2/4 Number of Words 128M/64M/32M Programmability Yes Timing Type Synchronous Max. Access Time (ns) 6 Maximum Erase |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:ISSI Model Number:IS42S16400F-6TL ...Memory ICs DRAM IS42S16400F-6TL 16 Bit Product Range Memory Data Storage Semiconductors Memory ICs DRAM IS42S16400F-6TL DRAM 64M, 3.3v, SDRAM, 4Mx16 16 bit App Characteristics Clock frequency: 200, 166, 143, 133 MHz Fully synchronous; all signals ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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