100v power mosfet

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:CN

Integrated Circuit Chip IPT020N10N5ATMA1 100V Power MOSFET Transistor 8-PowerSFN​ Product Description Of IPT020N10N5ATMA1 IPT020N10N5ATMA1 is OptiMOS™ 5 100V industrial power MOSFET Transistors in TO-Leadless is the ideal choice for high switching ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:RFP12N10L

High Power MOSFET RFP12N10L N-Channel Logic Level Power MOSFET 100V 12A 200mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ...

Brand Name:Hua Xuan Yang

Model Number:AP15N10S

Place of Origin:ShenZhen China

... volts. Higher voltages are not so easily achievable. Where the Power MOSFETs are used, it is their low ON resistance that is particularly attractive. This reduces power dissipation which reduces cost and size less metalwork and cooling is required. Also

Brand Name:DIODES

Model Number:ZXMP10A17E6TA

Place of Origin:Original

...100V P-CHANNEL ENHANCEMENT MODE MOSFET linear power mosfet trench power mosfet FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23-6 package APPLICATIONS • DC–DC Converters • Power Management functions • Disconnect switches • Motor control DESCRIPTION This new generation of Trench MOSFETs...

Model Number:ASDM100R160NKQ-R

...100V N-Channel Power MOSFET designed for power switching applications. It features low RDS(on) and FOM, extremely low switching loss, and excellent stability and uniformity, making it suitable for hard switched and high-frequency circuits, as well as uninterruptible power...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Place of Origin:US

Brand Name:Original

Model Number:IRFP4710PBF, IRFP460PBF

...MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 72A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V Vgs(th) (Max) @ Id 5.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V Power...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

IRFI4019HG-117P 190A Power MOSFET 100V Ultra-Low Rds(on) 1.9mandOmega; TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications andnbsp; Features Integrated Half-Bridge Package Reduces the Part...

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:JUYI

Model Number:JY11M

Place of Origin:China

...Power MOSFET By incorporating advanced trench processing techniques, the JY11M accomplishes a remarkable cell density, concurrently minimizing on-resistance and boasting a high repetitive avalanche rating. The convergence of these attributes renders this design exceptionally efficient and dependable for power...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ...

Brand Name:JEUNKEI

Model Number:JY11M

Place of Origin:China

... combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Features: ● 100V/110A, RDS(ON) =6.5mΩ@VGS=10V ● Fast switching and reverse body recovery ● Fully

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Model Number:ACPL-339J-000E

...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power...

Brand Name:OKYSTAR

Model Number:HGVL

Place of Origin:China

dimmable led driver 48w 1200ma Non Stroboscopic 100v power supply Detailed Input Voltage 180-265VAC, withstand 380VAC high voltage short-time shock. Turn on delay time<0.5S, standby power consumption<0.5W. Output current could choose by end user through ...

Place of Origin:USA

Brand Name:ON Semiconductor

Model Number:NTHD3100CT1G

... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ...