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sd2941 10w rf power transistor

from 129 Products

SD2941-10W Field Effect Transistor Transistors FETs MOSFETs RF Chip

China SD2941-10W Field Effect Transistor Transistors FETs MOSFETs RF Chip on sale
SD2941-10W Specifications Part Status Active Transistor Type N-Channel Frequency 175MHz Gain 15.8dB Voltage - Test 50V Current Rating 20A Noise Figure - Current - Test 250mA Power - Output 175W Voltage - Rated 130V Package / Case M174 Supplier Device Package M174 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. SD2941-10W......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ ERICSSON RF Power Transistors

China PTF080101S LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ ERICSSON RF Power Transistors on sale
PTF080101S IS A LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ . Part NO: PTF080101S Brand: ERICSSON Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Mega ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

SI1000-E-GM2R RF Power Transistor - High Power Output Low Noise

China SI1000-E-GM2R RF Power Transistor - High Power Output Low Noise on sale
SI1000-E-GM2R RF Power Transistor Features: • 500-1000 MHz Operating Frequency Range • 28V Operating Voltage • 10W Output Power • 6 dB Gain • High Efficiency • Low Noise • Low Distortion • High Linearity Applications: • Mobile Base Stations • Professional ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor

China CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor on sale
CGH40010F GaN IC 10W RF Power Gallium Nitride High Electronmobility Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

1-2 GHz L Band Optical Amplifier communication Module Psat 40dBm 10w RF power amplifier for Military and Defense

China 1-2 GHz L Band Optical Amplifier communication Module Psat 40dBm 10w RF power amplifier for Military and Defense on sale
...efficient amplifier designed to deliver high power and excellent performance within the L-band frequency range. Below are the detailed features and potential applications for this power amplifier: Key Features: Frequency Range: Operates within the 1 GHz to...
Nanjing Shinewave Technology Co., Ltd.

Address: Room 410, building 2, Big Data Industrial Base, Software Avenue, Yuhuatai District, Nanjing

5.8G 10W RF Power Amplifier Module 50Ω Input Output Impedance 2.5dB Noise Figure ≤-30dBc Harmonic Suppression

China 5.8G 10W RF Power Amplifier Module 50Ω Input Output Impedance 2.5dB Noise Figure ≤-30dBc Harmonic Suppression on sale
.... With high performance Spurious Suppression of ≤-60dBc, Gain Flatness of ≤±0.5dB, Noise Figure of 2.5dB, Gain of 30 To 40dB and Output Power of 10 To 20W, our RF Jammer Module will meet your different needs....
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

10W RF Power Amplifier GAN Digital Module for UAV with 10-600MHz Frequency and Anti-Interference Capability

China 10W RF Power Amplifier GAN Digital Module for UAV with 10-600MHz Frequency and Anti-Interference Capability on sale
... provides exceptional anti-interference capabilities and is specifically engineered for LORA wireless and RF module integration. Key Features 10W RF power output for robust signal transmission Wide frequency range: 10-600MHz operation GaN (Gallium Nitride)...
Nengxun Communication Technology Co.,Ltd.

Address: Address: 401, Jinxinuo Signal Connection Technology Industrial Park, No. 50, Baolong 2nd Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor YP601241T

China High Electron Mobility Gallium Nitride 28V 15W RF Power Transistor YP601241T on sale
...RF Power Transistor YP601241T Product Overview Innotion's YP601241T is a 15-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 6000MHz. The transistor is supplied in a plastic SOT-89 package. Technical Specifications Package SOT-89 Output Power......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

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