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rf power transistor list

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AD630ARZ RF Power Transistors 300V 7A 60W High Linearity TO-220 Package

China AD630ARZ RF Power Transistors 300V 7A 60W High Linearity TO-220 Package on sale
AD630ARZ RF Power Transistor 300V 7A 60W TO-220 Package Product Listing: Product Name: AD630ARZ RF Power Transistor Product Description: This AD630ARZ RF Power Transistor is a high-performance, high-efficiency device designed for use as a power amplifier......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers

China RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers on sale
... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND  ...
Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors

China RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors on sale
MRW53601 is a NPN SILICON RF POWER TRANSISTOR. Part NO: MRW53601 Brand: MOTOROLA Date Code: 03+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor

China 50W Gallium Nitride 28V DC to 4GHz High Electron Mobility GAN RF Power Transistor on sale
...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.

Address: Room 107, Sanjiang Yuan, 399 Linquan Street, Suzhou Industrial Park, Suzhou City, Jiangsu Province

D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET

China D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET on sale
...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited

Address: Room 1205-1207, Nanguang building, Huafu Road, Futian District, Shenzhen, Guangdong, China

Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors

China Wide Band 700-3600MHz 20W RF Power Transistor LDMOS FETs 28V Broad-Band LDMOS RF Transistor, High Power RF Transistors on sale
...
VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting

China MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting on sale
Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ......
Shenzhen Weitaixu Capacitor Co.,Ltd

Address: 9E, Block A, Huaqiang Plaza, Huaqiangbei, Futian, Shenzhen, China

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS

China PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS on sale
PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co

Address: 1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000

BFS505 15V RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor

China BFS505 15V  RF Power Transistor , 18mA 9GHz 150mW Surface Mount Transistor on sale
...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF......
DELI ELECTRONICS TECHNOLOGY CO.,LTD

Address: RM 311 3/F LINZHAN FORTUNE BUILDING No.1 SHENHUA STREET SHENFENG ROAD LIUYUE LONGGANG AREA SHENZHEN,CHINA

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor

China QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor on sale
QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ......
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

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