MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF
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MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
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...MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
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IRFR1018EPBF MOSFET Transistors
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...MOSFET Transistors Si TO-252-3 original in stock Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits Benefits Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche SOA Enhanced body diode dV/dt and dI/dt Capability Product Attribute Attribute Value Product Category: MOSFET...
Walton Electronics Co., Ltd.
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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects....
Amplifier module
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IRFB4310PBF 100V 130A FET HEXFET Power Mosfet IRFB7440PBF 40V 120A
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... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a...
Guangzhou Topfast Technology Co., Ltd.
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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PA RF Linear Power Amplifier With 75-100 Watt RF Power 900 MHz -980 MHz
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... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
Kimpok Technology Co., Ltd
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High Output Power RF Power Amplifier Module with Wide Frequency Range and Stable Gain for Reliable Signal Transmission
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RF Power Amplifier Module for High Power and Wideband Signal Transmission The RF Power Amplifier Module is engineered for high-performance signal amplification in RF and microwave systems. It delivers high output power, stable gain, and efficient operation......
Shaanxi Shinhom Enterprise Co.,Ltd
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320MHz 3dB Loss RF Cable Assemblies 3 Way RF Power Splitter
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... loss(dB) ≤0.2 ≤0.3 ≤0.4 Splitting loss (dB) ≤3 ≤4.8 ≤6 VSWR ≤1.25 Maximum power (W) 200 Third-order intermodulation(2×20W) ≤-140dBc Characteristic Impedance(Ω) 50 Interface Type Type N Female (NF) Ambient Temperature -......
Wuhan ETERN Optoelectronics Technology Co.,Ltd.
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