Nexperia BUK7K6R8-40E Dual N-Channel Power MOSFET 40V 40A LFPAK56D for Motor Drive
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... V power MOSFET from Nexperia, supplied in the LFPAK56D (SOT-1205) loss-free package. Two matched N-channel die share one 5 x 6 mm surface-mount ......
Dongguan Blueto Electronics&Communication Co., Ltd
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MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF
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MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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20-500 MHz Broadband 1000W High Power RF Amplifier
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...power, broadband RF amplifier engineered to deliver powerful RF amplification across a wide 20 MHz to 500 MHz frequency range. With a typical saturated output power of 1000 W and a minimum power gain of 60 dB, this rack-mounted amplifier is built for demanding RF......
Pinnacle Technology Co., Limited
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RF Plasma Bipolar Hemostatic Electrode Surgical Low‑Temperature Tip for Open Surgery Hemostasis
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... fluid serving as the conductive medium, the device produces a highly‑oxidizing thin plasma layer of 50‑100 μm surrounding the electrode tip. Powered by 3‑5 eV energy, this...
DAMAI TECH CO.,LIMITED.
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module
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RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF......
VBE Technology Shenzhen Co., Ltd.
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PA RF Linear Power Amplifier With 75-100 Watt RF Power 900 MHz -980 MHz
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... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
Kimpok Technology Co., Ltd
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N-end PA 1200-1500 MHz high power 100W RF power amplifier module counter UAV FPV
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...power 100W RF power amplifier module counter UAV FPV TXtelsig high power 100W PA 1200-1500 MHz rf power amplifier module is a kind of customizable module .This power amplifier takes advance RF technology that can cover about 1200-1500MHz frequncy range .At same time the module with excellent thermal management to meet much dements of various professional application .This is high power......
Amplifier module
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
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High Output Power RF Power Amplifier Module with Wide Frequency Range and Stable Gain for Reliable Signal Transmission
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RF Power Amplifier Module for High Power and Wideband Signal Transmission The RF Power Amplifier Module is engineered for high-performance signal amplification in RF and microwave systems. It delivers high output power, stable gain, and efficient operation......
Shaanxi Shinhom Enterprise Co.,Ltd
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