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power mosfet model

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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors

China F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors on sale
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd

Address: 24/25F, Building 13, Xingfucheng, Qingquan Road, Longhua District, Shenzhen, China

IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers

China IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers on sale
IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd

Address: Room 1120, Floor 11rd, New Asia Guoli Building, Futian District,Shenzhen City, Guangdong Province China,Zip:518031

IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET

China IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET on sale
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

IPT004N03LATMA1 New Original IC Integrated Circuits Chip N Channel Power MOSFET

China IPT004N03LATMA1 New Original IC Integrated Circuits Chip N Channel Power MOSFET on sale
...Power MOSFET Product Description Optimizedfore-fuseandORingapplication Verylowon-resistanceRDS(on)@VGS=4.5V 100%avalanchetested Superiorthermalresistance N-channel QualifiedaccordingtoJEDEC1)fortargetapplications Pb-freeleadplating;RoHScompliant Product Specifications model......
Shenzhen Tengshengda ELECTRIC CO., LTD.

Address: 609 No. 4018, baoan Road, Xixiang Street, Baoan District, Shenzhen, Guangdong

Ultra-Low 0.0015Ω Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175°C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion

China Ultra-Low 0.0015Ω Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175°C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion on sale
...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power......
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

Dual output 1 amp gate drive optocoupler Broadcom ACPL-339J-000E for power MOSFET and IGBT motor control

China Dual output 1 amp gate drive optocoupler Broadcom ACPL-339J-000E for power MOSFET and IGBT motor control on sale
...Power MOSFET Gate Drive Optocoupler The ACPL-339J is an advanced, easy-to-use, intelligent optocoupler designed for driving IGBT and Power MOSFETs. It features 1.0 A dual outputs and supports MOSFET buffers of various current ratings, enabling system engineers to scale gate drive designs for different power......
Beijing Silk Road Enterprise Management Services Co., Ltd.

Address: 16 Floor, Unit B, Jiatai International Mansion, No 41, Dongsihuan Zhong Road, Chaoyang District, Beijing

Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF

China Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF on sale
... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are...
Guangzhou Topfast Technology Co., Ltd.

Address: Room 2201-03, Room 2206, Changfeng International 1, No. 96, Lixin No. 12 Road, Zengcheng District, Guangzhou City, Guangdong province

NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

China NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET on sale
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ......
Excellent Integrated System LIMITED (EIS LIMITED)

Phone: 86-755-6197-9001

Address: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

China NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET on sale
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ......
Excellent Integrated System LIMITED (EIS LIMITED)

Phone: 86-755-6197-9001

Address: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V TO247-3

China Low Gate Charge Igbt Mosfet High Power N Channel Power Mosfet 600V  TO247-3 on sale
Infineon MOSFET N-Ch 650V 20.7A TO247-3 CoolMOS C3,600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ Replacement for 600V CoolMOS™ C3 is CoolMOS™ P7 600V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. C3 is the "working......
Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

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