RF Power Transistors MRF141G - Motorola, Inc - N-CHANNEL BROADBAND RF POWER MOSFET
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...broadband performance of this device makes possible solid state transmitters for FM broadcast or TV channel frequency bands. • Guaranteed Performance at 175 MHz, 28 V: Output Power — 300 W Gain — 12 dB (14 dB Typ) Efficiency — 50% Applications:...
Mega Source Elec.Limited
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D2085UK 28V120W 1MHz-1000MHz Push-pull RF Power Transistor MOSFET
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...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power...
Wisdtech Technology Co.,Limited
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MDmesh DM6 High Voltage Mosfet , Enhancement Rf Power Transistor For LED Lighting
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Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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AD8364ACPZ-REEL7 RF Power Transistors N-Channel High Power Output
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Product Listing: AD8364ACPZ-REEL7 RF Power Transistors Description: The AD8364ACPZ-REEL7 is a gallium arsenide (GaAs) monolithic microwave integrated circuit (MMIC) RF power transistor designed for use in cellular and other wireless applications. Features......
Shenzhen Sai Collie Technology Co., Ltd.
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Load Switch Rf Power Transistor / PWM High Power Mosfet Transistors
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AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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N Channel Mosfet Field Effect Transistors 10N60 600V For Switched Mode Power Supplies
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...channel mosfet field effect transistors for switched mode power supplies Datasheet:CY-10N60F.pdf Field effect transistor features: Drain Current is 9.5A, 600V, RDS(on) =0.73Ω @VGS =10 V Low gate charge MOSFET simplifies gate drive design( typical 9.0 nC) Fast switching 100% avalanche tested to make sure quality before ship This 10N60 improved rate of change of voltage over time Mosfet General Description: The10N60H N Channel...
Shenzhen Canyi Technology Co., Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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STB80PF55T4 Transistor IC Chip P Channel MOSFET High Power and Efficiency
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High-Performance STB80PF55T4 P-Channel MOSFET for Power Applications The STMicroelectronics STB80PF55T4 is a high-performance P-Channel MOSFET designed for power applications that require efficient switching and high current handling capabilities. With a ......
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS
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PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates......
Angel Technology Electronics Co
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IRF7424TRPBF HEXFET Power MOSFET testing power transistors
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IRF7424TRPBF HEXFETPower MOSFET testing power transistors Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Description These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to ......
ChongMing Group (HK) Int'l Co., Ltd
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