BTS282Z E3230 TO220-7 N Channel MOSFET 49V 80A Transistors FETs
|
... parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N...
Guangzhou Topfast Technology Co., Ltd.
|
IRLML5203TRPBF Infineon / IRUltra Low On-Resistance Low Gate Charge P-Channel MOSFET MOSFET
|
...Infineon / IR MOSFET MOSFT P-Ch -30V -3A 98mOhm 9.5nC Log Lvl 1.Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge Lead-Free RoHS Compliant, Halogen-Free 2.Description These P-channel MOSFETs from International ......
Shenzhen Hongxinwei Technology Co., Ltd
|
Lead Free N Channel Mosfet Transistor , 200V 18A High Speed Mosfet Transistor IRF640NPBF
|
...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs......
Shenzhen ATFU Electronics Technology ltd
|
BUK7K6R8-40E,115 Nexperia N-Channel MOSFET LFPAK-56D Integrated Circuit Electronic Component In Stock
|
...Channel MOSFET LFPAK-56D Integrated Circuit Electronic Component In Stock Dual standard level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) packageusing TrenchMOS technology. This product has been designed and qualified toAEC Q101 standard for use in high performance automotive applications. Features and benefits • Dual MOSFET......
Dongguan Blueto Electronics&Communication Co., Ltd
|
P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits
|
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and...
Shenzhen Winsun Technology Co., Ltd.
|
IGBT Power Module FKP300A - Sanken electric - N-Channel MOS FET
|
Quick Detail: N-Channel MOS FET Description: ●PDP driving ●High speed switching N-Channel MOS FET Applications: ●Low on-resistance ●Low input capacitance ●Avalanche energy capability guaranteed Specifications: part no. FKP300A Manufacturer Sanken......
Mega Source Elec.Limited
|
IPG20N06S4L14AATMA1 Power Transistor IC Chip N Channel MOSFET 40V 60V
|
...Channel MOSFET 40V 60V OptiMOS-T2 Power-Transistor Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Category: MOSFET......
Walton Electronics Co., Ltd.
|
SI2333DDS-T1-GE3 20V P-Channel MOSFET 4.1A Continuous Current 0.045Ω Rds(on) 1.8V Logic-Level Drive TO-236-3 SC-59 SOT-23-3 -55°C to +150°C AEC-Q101 Qualified
|
...MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET......
TOP Electronic Industry Co., Ltd.
|
High Quality N-Channel MOSFET DFN-5 NTMFS4C09NT1G
|
High Quality N-Channel MOSFET DFN-5 NTMFS4C09NT1G Product Description Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These Devices are Pb−Free, Halogen Free/BFR Free......
Shenzhen Tengshengda ELECTRIC CO., LTD.
|
42A 100V Semiconductor IC Chip IRFP150NPBF TO-247 N Channel MOSFET
|
IRFP150NPBF TO-247 42A 100V N-channel MOSFET Brand New and original Integrated Circuit chip PRODUCT DESCRIPTION Part number IRFP150NPBF is manufactured by IRFP150NPBF and distributed by Stjk. As one of the leading distributors of electronic products, we ......
STJK(HK) ELECTRONICS CO.,LIMITED
|
Submit your “n channel mosfet fet” inquiry in a minute :