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Mosfets For Power Applications

1-10 Results for

mosfets for power applications

from 356 Products

F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors

China F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors on sale
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd

Address: 24/25F, Building 13, Xingfucheng, Qingquan Road, Longhua District, Shenzhen, China

Single Mode 4 Port Fiber Optic Circulator with 1064nm and 1310nm Wavelength for High Power Applications

China Single Mode 4 Port Fiber Optic Circulator with 1064nm and 1310nm Wavelength for High Power Applications on sale
Single Mode 4 Four Port Fiber Optical Laser Circulator High Power 1064nm 1310nm 1550nm Descriptions We offer circulators with no connectors, FC/PC connectors, or FC/APC connectors or also other type of connector to match with customer request. There are ......
KOCENT OPTEC LIMITED

Address: 14F, Duocai B Bd, Guanlan Hi-Tech Park, Guanhu, Longhua, Shenzhen, Guangdong, China. P/c : 518110

1.6-5.4ton Hand Wire Rope Hoist with 20M Lifting Height and 800-5400KG Capacity for Construction and Power Applications

China 1.6-5.4ton Hand Wire Rope Hoist with 20M Lifting Height and 800-5400KG Capacity for Construction and Power Applications on sale
1.6-5.4ton Hand Wire Rope Pulling Hoist or Tirfor Use and Characteristic 1) Capacity: 0.8T x 20M, 1.6T x 20M, 3.2T x 20M, 5.4T x 20M. 2) All hoists are supplied complete with 20 meter wire rope and an extendable operating lever. 3) Wire rope is tapered......
Changshu Xinya Machinery Manufacturing Co., Ltd.

Address: Yongfu Road, Yetang Town District , Shanghu Town, Changshu, Suzhou, Jiangsu, China (Mainland)

NH1GG69V250P 1250V 250A SiC MOSFET Module Low Rds(on) 3.3mΩ Fast Switching High Frequency Low Loss High Power Density Industrial Grade For PV Inverters and Motor Drives

China NH1GG69V250P 1250V 250A SiC MOSFET Module Low Rds(on) 3.3mΩ Fast Switching High Frequency Low Loss High Power Density Industrial Grade For PV Inverters and Motor Drives on sale
... according to DIN 43 620 parts 1 to 4 Non-isolated gripping lugs Double indicator 0% cadmium Applications gG: general purpose cable and line protection Description The NH1GG69V250P is a high-power Silicon Carbide (SiC) MOSFET module engineered for the most...
TOP Electronic Industry Co., Ltd.

Address: RM1441,GUO LI Bldg,ZhongHang RD.,Futian Dist.Shen Zhen,China

IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET

China IGBT Power Module FMH23N50E - Fuji Electric - N-CHANNEL SILICON POWER MOSFET on sale
...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Micro-Power, CMOS Input,RRIO, 1.4V, Push-Pull OutputComparator With Latch Enable Integrated Circuit IC

China Micro-Power, CMOS Input,RRIO, 1.4V, Push-Pull OutputComparator With Latch Enable Integrated Circuit IC on sale
...Power, CMOS Input,RRIO, 1.4V, Push-Pull OutputComparator With Latch Enable Integrated Circuit IC The SGM8703 is a single, rail-to-rail input CMOScomparator with typical 300nA ultra-low power supplycurrent. The comparator operates from a wide range of1.4V to 5.5V supply voltage, and is guaranteed tooperate at 1.4V, 2.5V and 5.0V. This feature is suitablefor battery-powered applications.The SGM8703 is optimized for micro-power......
Guangdong Uchi Electronics Co.,Ltd

Address: Room 810, Unit 2, Building 5, Huixing Commercial Center, Dongsheng Road No.1, Zhongshan Dong, Shilong Town Dongguan, GUANGDONG, 523326 CN

Class AB Powerful Car Subwoofers 300 Watt , 10 Inch Active Subwoofer

China Class AB Powerful Car Subwoofers 300 Watt , 10 Inch Active Subwoofer on sale
...Powerful Car Subwoofers , 10 Inch Mosfet Slim Active Subwoofer 300W 10" slim subwoofer PWM MOSFET POWER SUPPLY CLASS A/B Technology 1 Channel High Performance Power Amplifier Active Subwoofer Slim Design for Under seat high power Full Aluminum any with color Anodizing finishing, Good Bass Performance Active Subwoofer Frequency response: 30Hz~200Hz 4 way protection Applications......
Shenzhen XHR Car Audio Technology Co., LTD.

NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

China NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET on sale
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ......
Excellent Integrated System LIMITED (EIS LIMITED)

Phone: 86-755-6197-9001

Address: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET

China NTHD3100CT1G - ON Semiconductor - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET on sale
... - Power MOSFET 20 V, +3.9 A /−4.4 A, Complementary ChipFET. Detailed Description of NTHD3100CT1G: EIS Part Number: EIS-NTHD3100CT1G Manufacturer Part Number: NTHD3100CT1G Manufacturer / Brand: ON Semiconductor Brief Description: Power MOSFET ......
Excellent Integrated System LIMITED (EIS LIMITED)

Phone: 86-755-6197-9001

Address: RM 906, WORKINGBERG COMM BLDG, 41-47 MARBLE RD, HONGKONG

P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits

China P - Channel Mosfet digital integrated circuits ,IRLML6402TRPBF Digital IC Circuits on sale
... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and...
Shenzhen Winsun Technology Co., Ltd.

Address: 311EF, B Buliding, Zhengzhong Time Square, Longgang District, Shenzhen City, China.

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