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ldmos transistor

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RF Power Transistors BLC6G22-75 Power LDMOS transistor RF Power Transistors

BLC6G22-75 is a Power LDMOS transistor. Part NO: BLC6G22-75 Brand: Date Code: 07+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......

Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

MRFE6VP6300HR5 RF LDMOS Transistor 230MHz 26.5dB 300W NI-780-4

MRFE6VP6300HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 26.5dB 300W NI-780-4 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile ......

Shenzhen Koben Electronics Co., Ltd.

Address: C12F, Huaqiang Plaza, Huaqiangbei Shenzhen,China 518031

PB Free NPN PNP Transistor TPS62141RGTR Power LDMOS Transistor

NPN PNP Transistor Texas Instruments/TI TPS62141RGTR Vin (Min) (V) 3 Vin (Max) (V) 17 Vout (Min) (V) 1.8 Vout (Max) (V) 1.8 Iout (Max) (A) 2 Iq (Typ) (uA) 17 Switching frequency (Min) (kHz) 1250 Switching frequency (Max) (kHz) 2500 Features Enable, Light ......

Yingxinyuan Int'l(Group) Ltd.

Address: 7F, Building F, Longjing Science park, 335 Bulong Road, Ma Antang Community, Bantian Street, Longgang District, Shenzhen, China

BLF188XR Electronic Component SOT539A BLF188X R Power LDMOS transistor BLF188 XR BLF 188XR BL F188XR B LF188XR

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ShenZhen QingFengYuan Technology Co.,Ltd.

Address: Room 2808-2809, Duhuixuan, No. 3018, Shennan Avenue, Huahang Community, Huaqiang North Street, Futian District, Shenzhen

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz

Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...

VBE Technology Shenzhen Co., Ltd.

Address: Floor 4, Building 8, Xinwei Industrial Zone, Nanshan District, Shenzhen, Guangdong Province, China

BLP05H635XRY Field Effect Transistor Transistors FETs MOSFETs RF Chip

BLP05H635XRY Specifications Part Status Active Transistor Type LDMOS (Dual), Common Source Frequency 108MHz Gain 27dB Voltage - Test 50V Current Rating - Noise Figure - Current - ......

KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS

...transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS......

Angel Technology Electronics Co

Address: 1607B Coastal Buidling East Block Nanshan District Shenzhen China 518000

Blf8g20ls-400pv 400w 1805-1995mhz Ldmos Base Station Transistor Microcontroller Integrated Circuit

BLF8G20LS-400PV N/A Electronic Components IC MCU Microcontroller Integrated Circuits BLF8G20LS-400PV #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;......

Shenzhen Kaigeng Technology Co., Ltd.

Address: Room 502-C, Floor 5, East Building 4, Seg Science Park, No. 120, Zhenxing Road, Licun Community, Huaqiang North Street, Futian District, Shenzhen City, Guangdong Province, China

150W RF MOSFET Metal Oxide Semiconductor RFP-LD10M PXAC241702FC-V1-R250

...Transistor RFP-LD10M Description ThePXAC241702FC is a 28 V LDMOS FET with an asym metrical design intended for use in multi-standard cellular power amplifier ap-plications in the 2300 to 2400 MHz frequency band. Features include dual-path design, high gain and thermally-enhanced package with earless flange. Manufactured with Wolfspeed's advanced LDMOS......

Shenzhen Hongxinwei Technology Co., Ltd

Address: 3418, Duhuixuan, Shennan Avenue, Futian District, Shenzhen, Guangdong Province, China

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