FGH60N60SMD IGBT Power Transistor
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Fgh60n60sfd Igbt Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom......
Shenzhen Retechip Electronics Co., Ltd
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Circuit Control Field Stop IGBT Power Transistor FGH60N60SMD 600V 60A
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... Parameter Distribution • RoHS compliant Applications • Solar Inverter, UPS, SMPS, PFC • Induction Heating Using Novel Field Stop IGBT Technology,...
Shenzhen Koben Electronics Co., Ltd.
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IGBT Power Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip
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...Igbt Power Module Transistors NGTB40N120SWG Charging Pile Inverter Welding Chip App Characteristics TJmax = 175°C • Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 10 us Short Circuit Capability These are Pb−Free Devices Basic Data Product Attribute Attribute Value Manufacturer: onsemi Product Category: IGBT Transistors......
KZ TECHNOLOGY (HONGKONG) LIMITED
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IXYK110N120A4 IGBT Power Transistor 1200V 375A 1360W Through Hole TO-264
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... thin-wafer technology and a state-of-the-art 4th generation (GenX4™) trench IGBT process. These insulated-gate bipolar transistors feature reduced thermal resistance, low energy losses, fast switching, low tail current, and high current densities. The...
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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1200V 50A IGBT Power Transistor for UPS EV Chargers Solar Inverters HXY MOSFET APT50GT120B2RDQ2G-HXY
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Product Overview The APT50GT120B2RDQ2G is a 1200V, 50A Insulated Gate Bipolar Transistor (IGBT) designed for high-power applications. It features easy paralleling capability due to a positive temperature coefficient in VCESAT, low EMI, low gate charge, and......
Hefei Purple Horn E-Commerce Co., Ltd.
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STGW80V60DF 600V 80A Trench Gate IGBT Power Transistor for High-Speed Switching
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...IGBTs Trench gate V series 600V 80A HiSpd Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.85 V (typ.) @ IC = 80 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters Uninterruptible power supply Welding Power......
Shenzhen Filetti Technology Co., LTD
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MMBT5551LT1G IGBT Power Module 600mA 160V BJT Bipolar Transistors
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... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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IGBT Power Module 2DI50D-055A POWER TRANSISTOR MODULE FUJITSU igbt power module
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... conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power conditioning, frequency conversion equipment, motor speed,...
Mega Source Elec.Limited
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IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation
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... IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for high power ......
Shenzhen Sai Collie Technology Co., Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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