700-1000MHz LDMOS FETs RF High Power Transistors 28V 260W With Integrated ESD Protection
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VBE Technology Shenzhen Co., Ltd.
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IRF1404ZPBF N Channel Transistor 180A 200W HEXFET FET MOSFET
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... Hole TO-220AB Specification: Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Infineon Technologies Series HEXFET® Package Tube FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss)...
Guangzhou Topfast Technology Co., Ltd.
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Single Mosfet BSZ050N03LSGATMA1 BSZ050 Transistor PG-TSDSON-8
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... (ECDSA):ECDSA-based authentication Product Specifications Gate Charge (Qg) (Max) @ Vgs: 35 NC @ 10 V Technology: MOSFET (Metal Oxide) FET Type N-Channel Drain to Source Voltage (Vdss) 30 V Drive Voltage (Max Rds On,...
Shenzhen Tengshengda ELECTRIC CO., LTD.
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RF Power Transistors FLL421 High Voltage - High Power GaAs FET FSL RF Power Transistors RF
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FLL421 is a High Voltage - High Power GaAs FET. Part NO: FLL421 Brand: FSL Date Code: 97+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are widely ......
Mega Source Elec.Limited
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Powerful 14A/17A Electric Bike Controller High Performance With 6 Mosfets
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...mosfets for electric bicycle with direct price Specifications of our controller In order to better play the controller's performance and product stability, all of our controllers use imported power transistors. Rated voltage 36v-48v Rated Power 250w-350w Color silver/black Mosfet 6 Model 6 mosfets......
Changzhou Suring motor technology CO.,LTD
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SI2304DS,215 N-Channel 20V 3.7A MOSFET with Ultra-Low 45mΩ RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs
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...MOSFET with Ultra-Low 45mandOmega; RDS(on) SOT-23 Package High Performance Enhanced Efficiency Power Management and Logic Level Gate Drive for Space-Constrained Designs andnbsp; Features TrenchMOSandtrade; technology Very fast switching Subminiature surface mount package. andnbsp; Applications Battery management High......
TOP Electronic Industry Co., Ltd.
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High Performance Inductive Proximity Sensor Electric Switch TK Series
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.../AC type, NC/NO type. c). Connection shape or direct line is optional. d). Optional mounting, sensing distance and control mode. e). Transistor driven design with abnormal protection circuit. f). Sensing detection circuit optimization design,more...
Light Country(Changshu) Co.,Ltd
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AOZ5237QI High-Current High-Performance DrMOS Power Modul
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Power Driver Module MOSFET 1 Phase 40 A 31-PowerVFQFN Module...
SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
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High Performance 0.025mm Pure Nickel Wire Ni200 with High Ductility and Excellent Corrosion Resistance for Lithium Battery
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Grade:Ni200,Ni201,N4,N6 High ductility Excellent corrosion resistance good mechanical strength Alloy Description Nickel 200/201 is most widely used grade, generally specified for transistor caps, anodes for electronic tubes, leads of electronic components......
Shanghai Tankii Alloy Material Co.,Ltd
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High Gain Performance Mosfet Power Transistor NPN Darlington TIP122 ROHS Approved
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MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance......
Shenzhen ATFU Electronics Technology ltd
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