N-type Conductive SiC Substrate Composite Substrate 6inch For Epitaxy MBE CVD LPE
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...precision of ±0.2mm and utilizes the 4H polytype for superior electrical properties. The substrate exhibits a resistivity range of 0.015 to 0.025 ohm·cm, ensuring efficient conductivity. It includes a robust transfer layer thickness of at least 0.4μm,...
SHANGHAI FAMOUS TRADE CO.,LTD
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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H-N Type Conductive Solar Photovoltaic
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12inch Diameter 300mm SIC Substrate Epitaxial Polished Wafer Silicon Carbide Ingot Prime Grade 4H Type Conductive Solar Photovoltaic Product introduction 12 inch SiC substrate (12-inch SiC substrate) is a large silicon carbide (SiC) wafer, mainly used in ......
SHANGHAI FAMOUS TRADE CO.,LTD
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory
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SiC Substrate Wafer Manufacturer 4 inch P Grade SiC Wafer Factory Homray Material Technology offers silicon carbide SiC n-type and p-tpye epitaxial wafer. SiC epi wafer is mainly used for Schottky diodes, metal-oxiHomray Material Technology offersthe best price on the market for high quality SiC wafers and silicon carbide epitaxial wafers. The major products are 2 inch, 3 inch, 4 inch 6 inch silicon carbide substrate......
Homray Material Technology
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