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ddr4 x8 memory ic tester

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H5ANAG8NCJR-XNC 16Gb DDR4 SDRAM Memory IC Chip with 3200Mbps Data Rate and 1.2V Operating Voltage

China H5ANAG8NCJR-XNC 16Gb DDR4 SDRAM Memory IC Chip with 3200Mbps Data Rate and 1.2V Operating Voltage on sale
... suited for main memory applications requiring large memory density and high bandwidth. Specifications Type: DDR4 SDRAM Storage capacity: 16Gb (2GB) Data rate: 3200Mbps Configuration: 2Gb x 8 Bus width: x8 Clock frequency: up to 1600 MHz Operating voltage:...
ShenZhen Mingjiada Electronics Co.,Ltd.

Address: 1239 New Asia Guoli Building Zhenzhong Road.,Futian district Shenzhen China

Compact DDR5 X8 Test Adapter Memory IC Tester Using Consumer Motherboards

China Compact DDR5 X8 Test Adapter Memory IC Tester Using Consumer Motherboards on sale
DDR5 X8 Test Adapter– Affordable & Efficient Test Solution Our DDR5 X8 Test Adapter provides a cost-effective way to test DDR5 memory ICs without investing in expensive dedicated test equipment. Designed to work with standard PC motherboards and MemTest86/......
Sireda Technology Co., Ltd.

Address: Floor 6, Building 4, 10th Industry Park, GM Tianliao, Guangming New District, Shenzhen, PRC

MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16

China MT40A512M16HA-083E Flash Memory IC Dram 8 Gbit 512Mx16 on sale
...Memory ICs DRAM SDRAM - DDR4 SMD/SMT Tray • VDD = VDDQ = 1.2V ±60mV • VPP = 2.5V, –125mV, +250mV • On-die, internal, adjustable VREFDQ generation • 1.2V pseudo open-drain I/O • Refresh time of 8192-cycle at TC temperature range: – 64ms at -40°C to 85°C – 32ms at >85°C to 95°C – 16ms at >95°C to 105°C • 16 internal banks (x4, x8......
Walton Electronics Co., Ltd.

Address: 5C,Building D,GALAXY WORLD.Longhua District, Shenzhen.CN

SSF Flash Memory IC Integrated 2 Mbit / 4 Mbit X8 SST29SF040-55-4C-WH ROHS

China SSF Flash Memory IC Integrated 2 Mbit / 4 Mbit X8 SST29SF040-55-4C-WH ROHS on sale
SST29SF040-55-4C-WH - SILICON STORAGE TECHNOLOGY, INC - 2 MBIT / 4 MBIT (X8) SMALL-SECTOR FLASH Quick Detail: 2 Mbit / 4 Mbit (x8) Small-Sector Flash Description: The SST29SF020/040 and SST29VF020/040 are 256K x8 / 512K x8 CMOS Small-Sector Flash (SSF) ......
Shenzhen Huahao Gaosheng Technology Co., Ltd

Address: 2A2003, Building 2, Baohuju Garden, 200 Huaqing Avenue, Qinghu Community, Longhua Street, Longhua District, Shenzhen

Flash Memory IC Chip MT29F2G08AACWP - Micron Technology - 2Gb x8, x16: NAND Flash Memory

China Flash Memory IC Chip MT29F2G08AACWP - Micron Technology - 2Gb x8, x16: NAND Flash Memory on sale
Quick Detail: 2Gb x8, x16: NAND Flash Memory Description: • Density2 : 2Gb (single die) • Device width: x8, x16 • Configuration: # of die # of CE# # of R/B# I/O 1 1 1 Common • VCC: 2.7–3.6V • VCC: 1.65–1.95V • Package – 48-pin TSOP type I CPL3 (lead-free ......
Mega Source Elec.Limited

Address: R-62852 Golconda Electronic Market ,Zhenhua Road ,Futian District .SZ.CN.518031

Nand Flash Memory IC Chip Power Management ICs MICRON MT29F32G08CBADBWP

China Nand Flash Memory IC Chip Power Management ICs MICRON MT29F32G08CBADBWP on sale
... Open NAND Flash Interface (ONFI) 2.3-compliant1 Multiple-level cell (MLC) technology • Organization Page size x8: 8936 bytes (8192 + 744 bytes) Block size: 256 pages (2048K + 186K bytes) Plane size: 2 planes x ......
KZ TECHNOLOGY (HONGKONG) LIMITED

Address: RM4,16/F HO KING COMM CRT 2-16 FAYUEN ST MONGKOKKL

K4A8G165WG-BCWE DDR4-3200 8Gb (512MX16) 0.620ns Samsung Semiconductor, Inc.SDRAM - DDR4 Memory IC 8Gbit Parallel 3200 Mbps 19 ns

China K4A8G165WG-BCWE DDR4-3200 8Gb (512MX16) 0.620ns Samsung Semiconductor, Inc.SDRAM - DDR4 Memory IC 8Gbit Parallel 3200 Mbps 19 ns on sale
...ICs) Memory Memory Memory Interface Parallel Mfr Samsung Semiconductor, Inc. Clock Frequency 3200 Mbps Packaging Tray Write Cycle Time - Word, Page 15ns Part Status Active Access Time 19 ns Memory Type Volatile Voltage - Supply 1.2V Memory Format DRAM Operating Temperature 0°C ~ 95°C Technology SDRAM - DDR4 Mounting Type Surface Mount Memory......
HK NeoChip Technology Limited

Address: Futian District Huaqiang Subdistrict, Huaqiang Garden, Building A, Room 31C

MT40A1G8SA-062E:R Flash Memory Ic Chip 1GB Capacity 8-Bit Interface WFBGA Package

China MT40A1G8SA-062E:R Flash Memory Ic Chip 1GB Capacity 8-Bit Interface WFBGA Package on sale
Product Listing: MT40A1G8SA-062E:R Flash Memory Chips Product Parameters: - Memory Type: Flash - Density: 1GB - Organization: 8M x 8 - Speed: 6ns - Voltage: 2.7V to 3.6V - Package: WFBGA-95 Product Status Active Memory Type Volatile Memory Format DRAM ......
Shenzhen Sai Collie Technology Co., Ltd.

Address: 1702, Dingcheng international building, Zhonghang Road, Futian District, Shenzhen

Samsung M393A2K43DB3-CWE DDR4-3200AA 2Gx72 ECC Reg/RDIMM 2Rx8 (16GB)

China Samsung M393A2K43DB3-CWE DDR4-3200AA 2Gx72 ECC Reg/RDIMM 2Rx8 (16GB) on sale
...DDR4-3200AA Server Memory Samsung M393A2K43DB3-CWE 16GB (1x16GB) 3200Mbps PC4-25600 CL22 ECC Registered Dual Rank x8 1.2V DDR4 SDRAM 288-pin RDIMM Memory Module designed for server applications. Memory Size 16 GB Memory Technology DDR4 SDRAM Memory Voltage 1.20 V Number of Modules 1 x 16GB Memory Speed 3200 MHz Memory Standard DDR4-3200/PC4-25600 Memory......
Beijing Core-Net Techonology Co., Limited

Address: Room 1020-1034 QingheXincheng Haidian Beijing 100085 China

NAND128W3A2BN6E NAND512W3A2SN6E Program Ic Chip Color TV Ic Memory Flash Chip

China NAND128W3A2BN6E  NAND512W3A2SN6E Program Ic Chip Color TV  Ic  Memory Flash Chip on sale
NAND128-A, NAND256-A NAND512-A, NAND01G-A 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories FEATURES: ■ HIGH DENSITY NAND FLASH MEMORIES – Up to 1 Gbit memory array – Up to 32 Mbit spare area – Cost ......
ChongMing Group (HK) Int'l Co., Ltd

Address: Room 1204, DingCheng International Building, 518028 Futian District, SHENZHEN, CN

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