Airfast RF GaN Mosfet Power Transistor 1800 - 2200 MHz Working Frequency
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Mosfet Power Transistor A3G20S250-01SR3 Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V This 45 W RF power GaN transistor is designed for cellular base station applications covering the frequency range of 1800 to 2200 MHz. This part is ......
Shenzhen Weitaixu Capacitor Co.,Ltd
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LMG3425R050RQZR Gan Mosfet Driver Silicon Driver Gan Fet Drivers Integrated
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Silicon Driver LMG3425R050RQZR Gate Drivers GaN FET With Integrated Driver Description LMG3425R050RQZR integrates a silicon driver that enables switching speed up to 150 V/ns. TI’s integrated precision gate bias results in higher switching SOA compared......
ShenZhen Mingjiada Electronics Co.,Ltd.
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CGH55015F2
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... to the data sheet, such as PDF files Docx documents, etc. We have CGH55015F2 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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CGH55015F2 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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CGH55015F2 Specifications Part Status Active Transistor Type HEMT Frequency 5.65GHz Gain 12dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 200mA Power - Output 12.5W Voltage - Rated 84V Package / Case 440166 Supplier Device Package ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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CGH55015F2
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RF Mosfet 28 V 200 mA 5.65GHz 12dB 12.5W 440166...
Beijing Silk Road Enterprise Management Services Co.,Ltd.
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CGH55015F2
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RF Mosfet 28 V 200 mA 5.65GHz 12dB 12.5W 440166...
Beijing Silk Road Enterprise Management Services Co.,LTD
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650V GaN on Silicon Power Transistor HXY MOSFET HIGLD60R190D1 with RoHS Pb Free and REACH Compliance
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HIGLD60R190D1 650V GaN-on-Silicon Enhancement-mode Power Transistor The HIGLD60R190D1 is a 650V GaN-on-Silicon enhancement-mode power transistor in an 8mm x 8mm Dual Flat No-lead (DFN) package. Designed as a normally-OFF power switch, it offers ultra-high ......
Hefei Purple Horn E-Commerce Co., Ltd.
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QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors
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QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds......
Wisdtech Technology Co.,Limited
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Power MOSFET Gate Drive Optocoupler Broadcom ACPL-P346-060E with Compact Stretched SO6 Package
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...: High-Performance Gate Drive for Power MOSFETs The Broadcom ACPL-P346/W346 is an optically isolated power output stage designed for driving power, GaN (Gallium Nitride), and SiC (Silicon Carbide) MOSFETs. Leveraging BCDMOS technology, this gate drive......
Beijing Silk Road Enterprise Management Services Co., Ltd.
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UCC27524ADR IGBT MOSFET Gate Drivers Enable Pin PMIC Power Management ICs
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UCC27524ADR Gate Door Drivers LT8607EDC#TRMPBF DS2430AP+ PMIC Power Management ICs Applications • Switch-Mode Power Supplies • DC-to-DC Converters • Motor Control, Solar Power • Gate Drive for Emerging Wide Band-Gap Power Devices Such as GaN Description (......
Walton Electronics Co., Ltd.
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