MRF151G N-CHANNEL BROADBAND RF POWER MOSFET FSL RF Power Transistors RF
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MRF151G is a N-CHANNEL BROADBAND RF POWER MOSFET. Part NO: MRF151G Brand: FSL Date Code: 263+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source ......
Mega Source Elec.Limited
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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ISO 9001 RF Power Amplifier Module With Gain Flatness ≤±0.5dB Group Delay ≤2ns RF Signal Jammer Module
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RF Power Amplifier with Gain Flatness ≤±0.5dB and Group Delay ≤2ns, RF Signal Jammer Module Product Description: RF Power Amplifier Module This RF Power Amplifier Module is designed to provide high power and low noise performance in a compact package. It features an operating temperature range of -40℃ to +85℃, a weight of only 100g, and a VSWR of 1.5:1. The RF Power Amplifier Module is built with a built-in VCO, which permits RF......
VBE Technology Shenzhen Co., Ltd.
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PA RF Linear Power Amplifier With 75-100 Watt RF Power 900 MHz -980 MHz
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... of high radiated RF power to monitoring-unit and PA-Circuit We can provide appropriate radiator to you, one radiator can be installed 2 50W-Jammer-Module. Main Specification: No. Item ......
Kimpok Technology Co., Ltd
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N-end PA 1200-1500 MHz high power 100W RF power amplifier module counter UAV FPV
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...power 100W RF power amplifier module counter UAV FPV TXtelsig high power 100W PA 1200-1500 MHz rf power amplifier module is a kind of customizable module .This power amplifier takes advance RF technology that can cover about 1200-1500MHz frequncy range .At same time the module with excellent thermal management to meet much dements of various professional application .This is high power......
Amplifier module
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1
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Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET......
Shenzhen Tengshengda ELECTRIC CO., LTD.
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320MHz 3dB Loss RF Cable Assemblies 3 Way RF Power Splitter
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... loss(dB) ≤0.2 ≤0.3 ≤0.4 Splitting loss (dB) ≤3 ≤4.8 ≤6 VSWR ≤1.25 Maximum power (W) 200 Third-order intermodulation(2×20W) ≤-140dBc Characteristic Impedance(Ω) 50 Interface Type Type N Female (NF) Ambient Temperature -......
Wuhan ETERN Optoelectronics Technology Co.,Ltd.
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3MHz RF Power Supply , 200V DC Power Supply CE Approved
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... 3A Max. Output Frequency 3MHz Working Temperature 0~45 Degree Humidity ≤85% Working Theory The working principle of RF treatment is a thermal effect principle. It uses electromagnetic waves to quickly rub water molecules in...
Wisdom(Guangzhou) Electronics Company Limited
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Infineon HEXFET Power MOSFET N Channel 55V 30A DPAK IRLR3915TRPBF
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... Semiconductor Products N-Channel 55 V 30A (Tc) 120W (Tc) Surface Mount D-Pak Description This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are...
Guangzhou Topfast Technology Co., Ltd.
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