BLL1214-250,112
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..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLL1214-250,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ......
Rozee Electronics Co., Ltd
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BLL1214-250,112
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RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 12dB 250W SOT502A...
Beijing Silk Road Enterprise Management Services Co.,Ltd.
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BLL1214-250
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RF Mosfet 36 V 150 mA 1.2GHz ~ 1.4GHz 12dB 250W SOT502A...
Beijing Silk Road Enterprise Management Services Co.,LTD
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F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
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...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
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IXFX27N80Q Power Mosfet Transistor HiPerFET Power MOSFETs Q-CLASS
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HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die IXFK 27N80Q IXFR 27N80Q IXFX 27N80Q VDSS = 800 V ID25 = 27 A RDS(on) = 300 m trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
ChongMing Group (HK) Int'l Co., Ltd
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IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
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IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
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...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power...
Shenzhen Weitaixu Capacitor Co.,Ltd
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2N60 2A, 600VN-CHANNEL POWER MOSFET
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...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits....
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IR21094STRPBF SOP14 N Channel Power MOSFET IGBT Drivers
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IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS......
Shenzhen ATFU Electronics Technology ltd
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Silicon N Channel Power MOSFET ANHI ASW65R110E Suitable for Boost PFC and Telecom Power Applications
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...Power MOSFET designed for high-efficiency power conversion applications. It features low drain-source on-resistance (RDS(on)) of 0.095 (typ.) and easy gate control. This enhancement mode MOSFET is suitable for use in Boost PFC switches, half-bridge or resonance half-bridge topologies, server power supplies, telecom power......
Hefei Purple Horn E-Commerce Co., Ltd.
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