BLF6G27-75,112
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BLF6G27-75,112 Overview BLF6G27-75,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27-75,112......
Rozee Electronics Co., Ltd
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BLF6G27-75,112
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RF Mosfet 28 V 600 mA 9W SOT502A...
Shenzhen Wonder-Chip Electronics Company Limited
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BLF6G27-75,112
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RF Mosfet 28 V 600 mA 9W SOT502A...
Beijing Silk Road Enterprise Management Services Co.,Ltd.
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BLF6G27-75,112
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RF Mosfet 28 V 600 mA 9W SOT502A...
Beijing Silk Road Enterprise Management Services Co.,LTD
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BLF6G27-100,112 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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BLF6G27-100,112 Specifications Part Status Obsolete Transistor Type LDMOS Frequency - Gain - Voltage - Test 28V Current Rating 29A Noise Figure - Current - Test 900mA Power - Output 14W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF6G27-100,112......
KZ TECHNOLOGY (HONGKONG) LIMITED
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High Power MOSFET FDD5N50NZF N-Channel UniFETTM II, FRFET®, 500 V, 3.7 A, 1.75 Ω, DPAK
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High Power MOSFET FDD5N50NZF N-Channel UniFETTM II, FRFET®, 500 V, 3.7 A, 1.75 Ω, DPAK [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ......
Sunbeam Electronics (Hong Kong) Limited
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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HEXFET Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve ......
Anterwell Technology Ltd.
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SI2301CDS-T1-E3 high power mosfet transistors P - Channel 20-V (D-S) MOSFET
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...power mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112......
ChongMing Group (HK) Int'l Co., Ltd
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CAT25640VI-GT3 GIntegrated circuit chip High Power MOSFET Ic Memory SOIC-8
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CAT25640VI-GT3 Chipscomponent Electronic Components IC Chips' CAT25640VI-GT3 High Power MOSFET electronic chip brand new original SOIC-8_150mil EEPROM Memory IC 64Kb SPI 20 MHz 8-SOIC Category Integrated Circuits (ICs) Mfr Analog Devices Inc. Series ......
Shenzhen Xinshengyuan Electronic Technology Co., Ltd.
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600V N Channel Super Junction Power MOSFET HUAKE HCF60R150 with TO 220F Package and 100 Percent Avalanche Tested
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Product Overview The HCF60R150 is a 600V N-Channel Super Junction Power MOSFET from HUAKE semiconductors. It offers a continuous drain current of 24.0A and a low on-resistance of 130m (typ.) at VGS=10V. Key features include low gate charge, low Crss, 100% ......
Hefei Purple Horn E-Commerce Co., Ltd.
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