AD8361ARMZ-REEL7 Rf Power Amplifier Transistor
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...: Reel Number of Transistors: 7 Configuration: Single-Ended Power Output: +28dBm Gain: 16dB Operating Frequency: 0.05-6GHz Input/Output Impedance: 50Ω Operating Voltage: 5V ......
Shenzhen Sai Collie Technology Co., Ltd.
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz
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Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz...
VBE Technology Shenzhen Co., Ltd.
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28V DC-8.5GHz 12W GaN RF Power Amplifier Transistor Integrated Chip
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...RF Amplifier Transistor Innotion’s YP801241T is a 12-watt, pre-matched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 8500MHz. The transistor is supplied in a plastic DFN-6L 4mm*4.5mm package. Product Specifications Signal Bandwidth DC-8.5GHz Output Power......
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
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Ultra band 1000-2000MHz 47dBm Gain RF power amplifier Module for anti drone system
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.... With support for multiple frequency bands over 1000MHz bandwidth. Equipped with high power transistors circuits, this amplifier is capable of delivering a maximum output power of 50W, ensuring strong and reliable signal amplification for your projects....
Shenzhen TeXin electronic Co., Limited
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RF Power Transistors MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS
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Quick Detail: MHW903 - Motorola, Inc - 3.5 W 890 to 915 MHz RF POWER AMPLIFIERS Description: . . . designed specifically for the Pan European digital 2.0 watt, GSM hand–held radio. The MHW903, MHW953 and MHW954 are capable of wide power range control, ......
Mega Source Elec.Limited
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972
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NPN SILICON rf power mosfet transistors for RF power amplifiers on VHF band Mobile radio , 2SC1972 DESCRIPTION: The ASI 2SC1972 is Designed for RF power amplifiers on VHF band mobile radio applications. FEATURES INCLUDE: • Replaces Original 2SC1972 in ......
Anterwell Technology Ltd.
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1.2GHz 30W GaN Transistors Anti Drone Module RF Power Amplifier Module for Drone Defense
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... and customizable frequency/power options. Key Features Customizable frequency range: 300MHz - 6GHz Power output customization: 5W - 200W Advanced GaN transistor technology for enhanced efficiency Compact design for easy integration into anti-drone systems...
Chongqing Miao Yi Tang Technology Co., Ltd.
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2SC1971 C1971 TO220 Epitaxial Planar NPN Transistor For RF Power Amplifiers
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2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components......
Shenzhen Koben Electronics Co., Ltd.
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433MHz 20W GaN RF Power Amplifier Module For Anti Drone System Small Size
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... RF Power Amplifier Detect Module for Anti Drone System Autel Mavic 3 Counter Fpv C-Uas Djis Countermeasure Product Parameters GaN transistors are more efficient. The efficiency minus the driver (heating power consumption) is about 55-65%. In fact, the......
Padi Fly Technology Co., Ltd
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MRF6VP11KH MRF6VP11 MRF6VP 6VP11KH Power Transistor RF Power Amplifier MRF6VP11KH
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ShenZhen QingFengYuan Technology Co.,Ltd.
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