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10 Microseconds Rise Time Si Photodiode

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10 microseconds rise time si photodiode

from 3 Products

S8552 Vacuum Ultraviolet VUV Monitoring SI Photodiode Sensor

...SI Photodiode Sensor Features 1. Improved reliability for excimer lasers (ArF: 193 nm, KrF: 248 nm) 2. Large photosensitive area 10 x 10 mm 3. Windowless package 16.5 x 15.0 mm ceramic package Applications 1. Vacuum Uy monitor 2. Excimer laser monitor Dark current 0.05-1.0nA Terminal capacitance 4.0-8.0nF Rise time......

ShenzhenYijiajie Electronic Co., Ltd.

Address: Room 3306AB 33rd Floor, SEG Plaza,Huaqiang North Road, Futian District, Shenzhen Guangdong Province 518028

G215HAN01.1 21.5 inch 1920*1080 WLED a-Si TFT-LCD Screen

...Si TFT-LCD with AHVA (wide-viewing angle), Normally Black, transmissive mode Viewing angles: 89°/89°/89°/89° (Left/Right/Up/Down, typical) Colors: 16.7 million colors (8-bit) Contrast ratio: ~1000:1 (typical) Response time: ~12 ms (rise) / 10 ms (decay) typical Physical / ......

Shenzhen Yinji Electronics Co., Ltd.

Address: No. 1206, Building 8, Everbright Fashion HuiGu Building, Shanghenglang Community, Dalang Subdistrict, Shenzhen City, Guangdong Province, China

Multifunctional MOKE Microscope 250 nm Magneto Optical Kerr Effect Microscope For SOT Analysis

... PulseVertical Magnetic Field, which provides a vertical magnetic field strength of 60 mT with a rise time of 0.5 Us and a pulse width ranging from L Us to 10 Us. This ultrafast pulse capability allows researchers to capture dynamic magnetic processes with...

Truth Instruments Co., Ltd.

Address: 169 Zhuzhou Road, Laoshan District, Qingdao, Shandong Province, China

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