H5AN8G6NDJR-XNC

H5AN8G6NDJR-XNC is a DDR4 Dynamic Random Access Memory (DRAM) chip produced by SK hynix. Here are the main parameters of this chip:

Storage Capacity:

• Capacity: 8Gb (i.e., 1GB), achieved through its 512Mx16 architecture.

Technical Specifications:

• Type: DDR4 SDRAM
• Speed: Depending on sources, speeds may vary, but it generally supports high-speed data transmission. Some information indicates that its speed can reach up to 3200Mbps, but please note that specific speeds may differ due to product batches or application environments.
• Operating Voltage: 1.2V

Package Form:

• Package: Fine-Pitch Ball Grid Array (FBGA), specifically a 96-ball FBGA package.

Temperature Range:

• Operating Temperature: Depending on sources, the temperature range may vary slightly. Some information indicates that its operating temperature range is from 0°C to 85°C, while others state that its temperature specifications can reach from 0°C to +95°C. This indicates that it can operate stably within a wide range of ambient temperatures.

Environmental Characteristics:

• Compliant with RoHS (Restriction of Hazardous Substances) standards, indicating that it reduces the use of harmful substances during production and meets environmental requirements.

Other Parameters:

• Lot Number: Depending on market availability, lot numbers may vary. Some information indicates that its lot number is 23+.
• Manufacturer: SK hynix

Please note that the above parameters may change due to product batches, market availability, or specific application environments. To obtain the most accurate and up-to-date parameter information, it is recommended to consult SK hynix directly or relevant suppliers.

Additionally, the performance of DDR4 DRAM chips is influenced by other factors such as timing parameters (e.g., CAS latency, RAS-to-CAS delay), power consumption characteristics (e.g., operating power, standby power), and reliability testing. These factors are described in more detail in the chip's datasheet or technical specifications.

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