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BCR183WE6327

Categories Discrete Semiconductor
Category: Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Current - Collector (Ic) (Max): 100 mA
Product Status: Active
Transistor Type: PNP - Pre-Biased
Frequency - Transition: 200 MHz
Mounting Type: Surface Mount
Package: Bulk
Series: -
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Supplier Device Package: PG-SOT323-3-1
Resistor - Base (R1): 10 kOhms
Mfr: Infineon Technologies
Resistor - Emitter Base (R2): 10 kOhms
Current - Collector Cutoff (Max): 100nA (ICBO)
Power - Max: 250 mW
Package / Case: SC-70, SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Base Product Number: BCR183
Description: BIPOLAR DIGITAL TRANSISTOR
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BCR183WE6327

Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Biased 50 V 100 mA 200 MHz 250 mW Surface Mount PG-SOT323-3-1
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