IPP03N03LA

Categories	Discrete Semiconductor
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 100µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	57 nC @ 5 V
Rds On (Max) @ Id, Vgs:	3mOhm @ 55A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Box (TB)
Drain to Source Voltage (Vdss):	25 V
Vgs (Max):	±20V
Product Status:	Obsolete
Input Capacitance (Ciss) (Max) @ Vds:	7027 pF @ 15 V
Mounting Type:	Through Hole
Series:	OptiMOS™
Supplier Device Package:	PG-TO220-3
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Power Dissipation (Max):	150W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	IPP03N
Description:	MOSFET N-CH 25V 80A TO220-3

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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

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N-Channel 25 V 80A (Tc) 150W (Tc) Through Hole PG-TO220-3

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