SPP04N60C3HKSA1

Categories	Discrete Semiconductor
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	3.9V @ 200µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-220-3
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Rds On (Max) @ Id, Vgs:	950mOhm @ 2.8A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	10V
Package:	Tube
Drain to Source Voltage (Vdss):	650 V
Vgs (Max):	±20V
Product Status:	Obsolete
Input Capacitance (Ciss) (Max) @ Vds:	490 pF @ 25 V
Mounting Type:	Through Hole
Series:	CoolMOS™
Supplier Device Package:	PG-TO220-3-1
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	4.5A (Tc)
Power Dissipation (Max):	50W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	SPP04N
Description:	MOSFET N-CH 650V 4.5A TO220-3

Contact Now

Add to Cart

Company Info.

SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

Verified Supplier

Haven't found right suppliers
Our buyer assistants can help you find the most suitable, 100% reliable suppliers from China.
And this service is free of charge.
we have buyer assistants who speak English, French, Spanish......and we are ready to help you anytime!

Submit Buying Request

N-Channel 650 V 4.5A (Tc) 50W (Tc) Through Hole PG-TO220-3-1

Send your message to this supplier


*From:	Your email address is incorrect!
*To:	SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD
*Subject:	Subject is empty!
*Message:	For the best results, we recommend including the following details: -Self introduction -Required specifications -Inquire about price/MOQ Characters Remaining: (0/3000) Please enter 20 to 3000 characters to contact this supplier!