BSP317PE6327

Categories	Discrete Semiconductor
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 370µA
Operating Temperature:	-55°C ~ 150°C (TJ)
Package / Case:	TO-261-4, TO-261AA
Gate Charge (Qg) (Max) @ Vgs:	15.1 nC @ 10 V
Rds On (Max) @ Id, Vgs:	4Ohm @ 430mA, 10V
FET Type:	P-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT)
Drain to Source Voltage (Vdss):	250 V
Vgs (Max):	±20V
Product Status:	Obsolete
Input Capacitance (Ciss) (Max) @ Vds:	262 pF @ 25 V
Mounting Type:	Surface Mount
Series:	SIPMOS®
Supplier Device Package:	PG-SOT223-4
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	430mA (Ta)
Power Dissipation (Max):	1.8W (Ta)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	BSP317
Description:	MOSFET P-CH 250V 430MA SOT223-4

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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

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P-Channel 250 V 430mA (Ta) 1.8W (Ta) Surface Mount PG-SOT223-4

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