IPD09N03LA G

Categories	Discrete Semiconductor
Category:	Discrete Semiconductor Products Transistors FETs, MOSFETs Single FETs, MOSFETs
FET Feature:	-
Vgs(th) (Max) @ Id:	2V @ 20µA
Operating Temperature:	-55°C ~ 175°C (TJ)
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:	13 nC @ 5 V
Rds On (Max) @ Id, Vgs:	8.6mOhm @ 30A, 10V
FET Type:	N-Channel
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Package:	Tape & Reel (TR) Cut Tape (CT)
Drain to Source Voltage (Vdss):	25 V
Vgs (Max):	±20V
Product Status:	Obsolete
Input Capacitance (Ciss) (Max) @ Vds:	1642 pF @ 15 V
Mounting Type:	Surface Mount
Series:	OptiMOS™
Supplier Device Package:	PG-TO252-3-11
Mfr:	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C:	50A (Tc)
Power Dissipation (Max):	63W (Tc)
Technology:	MOSFET (Metal Oxide)
Base Product Number:	OPD09N
Description:	MOSFET N-CH 25V 50A TO252-3

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SHENZHEN ECER NETWORK TECHNOLOGY CO.,LTD

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N-Channel 25 V 50A (Tc) 63W (Tc) Surface Mount PG-TO252-3-11

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