4H-N Type SiC Substrate 10x10mm Wafer for Power Electronics

The 4H-N type SiC 10*10 mm small wafer is a high-performance semiconductor substrate based on silicon carbide (SiC), a third-generation semiconductor material. Fabricated via Physical Vapor Transport (PVT) or High-Temperature Chemical Vapor Deposition (HTCVD), it is available in 4H-SiC or 6H-SiC polytypes and N-type or P-type doping configurations. With dimensional tolerances within ±0.05 mm and surface roughness Ra < 0.5 nm, each wafer is epitaxial-ready and undergoes rigorous inspection, including XRD crystallinity validation and optical microscopy defect analysis.

• High Thermal Conductivity: 490 W/m·K, three times that of silicon, enabling efficient heat dissipation.
• Breakdown Strength: 2.4 MV/cm, supporting high-voltage and high-frequency operation.
• High-Temperature Stability: Operational up to 600°C with low thermal expansion (4.0*10⁻⁶/K).
• Mechanical Durability: Vickers hardness 28–32 GPa, flexural strength >400 MPa.
• Customization Support: Adjustable orientation, thickness, doping, and geometry.

• Electric vehicle power inverters (3–5% efficiency gain)
• 5G RF power amplifiers (24–39 GHz bands)
• Smart grid HVDC converters and industrial motor drives
• Aerospace sensors and satellite power systems
• UV LEDs and laser diodes

1. 4H-N SiC Substrate, 5*5 mm, 350 μm (Prime/Dummy Grade)
2. Custom-shaped SiC wafers with backside metallization

Q: What are typical applications of 10*10 mm SiC wafers?

A: Ideal for prototyping power devices (MOSFETs/diodes), RF components, and high-temperature optoelectronics.

Q: How does SiC compare to silicon?

A: SiC offers 10* higher breakdown voltage, 3* better thermal conductivity, and superior high-temperature performance.

1. Complete production chain from cutting to final cleaning and packing.
2. Capability to reclaim wafers with diameters 4-inch—12-inch.
3. 20 year experience of wafering and reclaiming of monocrystalline electronic materials

ZMSH Technology can provide customers with imported and domestic high-quality conductive, 2-6inch semi-insulating and HPSI (High Purity Semi-insulating) SiC substrates in batches; In addition, it can provide customers with homogeneous and heterogeneous silicon carbide epitaxial sheets, and can also be customized according to the specific needs of customers, with no minimum order quantity.

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