Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	15nA
Transition frequency(fT):	100MHz
Vce Saturation(VCE(sat)):	600mV@100mA,5mA
type:	NPN
Pd - Power Dissipation:	250mW
Current - Collector(Ic):	100mA
Collector - Emitter Voltage VCEO:	45V
Operating Temperature:	-65℃~+150℃
Description:	Bipolar (BJT) Transistor NPN 45V 100mA 100MHz 250mW Surface Mount SOT-23
Mfr. Part #:	BC850C
Model Number:	BC850C
Package:	SOT-23

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Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching

Product Overview

The BC849-BC850 series are NPN transistors designed for low current and low voltage applications. They feature low power dissipation and are suitable for general-purpose amplification and switching. These transistors are available in the SOT-23 package, offering a compact solution for various electronic designs.

Product Attributes

Brand: slkormicro.com
Type: NPN Transistors
Package: SOT-23

Technical Specifications

Parameter	Symbol	Rating	Unit
Emitter-Base Voltage	V_EBO	5	V
Collector Current (DC)	I_C	100	mA
Peak Collector Current	I_CM	200	mA
Peak Base Current	I_BM	200	mA
Total Power Dissipation (Tamb = 25 C)	P_tot	250	mW
Storage Temperature	T_stg	-65 to 150	C
Junction Temperature	T_j	150	C
Operating Ambient Temperature	T_amb	-65 to 150	C
Thermal Resistance Junction to Ambient (Transistor mounted on an FR4 printed-circuit board)	R_th(j-a)	500	K/W
Collector-Base Voltage	V_CBO	30	V
Collector-Emitter Voltage	V_CEO	30	V

Model	Marking	DC Current Gain (h_FE) (I_C = 10 mA; V_CE = 5 V)	DC Current Gain (h_FE) (I_C = 100 mA; V_CE = 5 V)	Collector-Emitter Saturation Voltage (V_CEsat) (I_C = 10 mA; I_B = 0.5 mA)	Collector-Emitter Saturation Voltage (V_CEsat) (I_C = 100 mA; I_B = 5 mA)	Base-Emitter Saturation Voltage (V_BEsat) (I_C = 10 mA; I_B = 0.5 mA)	Base-Emitter Saturation Voltage (V_BEsat) (I_C = 100 mA; I_B = 5 mA)	Base-Emitter Voltage (V_BE) (I_C = 2 mA; V_CE = 5 V)	Collector Capacitance (C_c) (I_E = i_e = 0; V_CB = 10 V; f = 1 MHz)	Emitter Capacitance (C_e) (I_C = i_c = 0; V_EB = 500 mV; f = 1 MHz)	Transition Frequency (f_T) (I_C = 10 mA; V_CE = 5 V)	Noise Figure (F) (I_C = 200 A; V_CE = 5 V; R_S = 2 k, f = 10 Hz to 15.7 kHz)	Noise Figure (F) (I_C = 200 A; V_CE = 5 V; R_S = 2 k, f = 1 kHz; B = 200 Hz)	Unit
BC849B	2B	240 - 450	200 - 600	90 - 250	200 - 600	700	900	580 - 700	2.5	11	100	4	4	mV
BC849C	2C	450 - 800	420 - 800	90 - 250	200 - 600	700	900	580 - 700						mV
BC850B	2F	240 - 450	200 - 600	90 - 250	200 - 600	700	900	580 - 700						mV
BC850C	2G	450 - 800	420 - 800	90 - 250	200 - 600	700	900	580 - 700						mV

Dimension	Symbol	Min	Max	Unit
A	A	0.9	1.1	mm
A1	A1	0.01	0.1	mm
b	bp	0.38	0.48	mm
c	c	0.15	0.2	mm
D	D	2.8	3.0	mm
E	E	2.5	2.7	mm
e	e	1.9	2.1	mm
e1	e1	1.2	1.4	mm
H_E	HE	0.45	0.55	mm
L_p	Lp	0.09	0.15	mm
Q	Q	0.3	0.5	mm
w	w	0.1	0.3	mm
v	v	0.45	0.55	mm

2210091830_Slkor-BC850C_C5185919.pdf

Low current low voltage NPN transistor Slkor BC850C SOT23 package suitable for amplification switching

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