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| Categories | Single Bipolar Transistors |
|---|---|
| Current - Collector Cutoff: | 100nA |
| Emitter-Base Voltage(Vebo): | 5V |
| Pd - Power Dissipation: | 500mW |
| Transition frequency(fT): | 100MHz |
| type: | NPN |
| Number: | 1 NPN |
| Current - Collector(Ic): | 1.5A |
| Collector - Emitter Voltage VCEO: | 25V |
| Operating Temperature: | -55℃~+150℃@(Tj) |
| Description: | Bipolar (BJT) Transistor NPN 25V 1.5A 100MHz 500mW Surface Mount SOT-89 |
| Mfr. Part #: | SS8050 |
| Model Number: | SS8050 |
| Package: | SOT-89 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The SS8050 is an NPN Power Amplifier Bipolar Transistor designed for power amplification applications. It offers key features suitable for various electronic circuits.
| Characteristic | Symbol | Rating | Unit | Min | Type | Max |
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | 40 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 25 | V | 25 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 5 | V | 5 | ||
| Collector-Base Leakage Current | ICBO | 40 | nA | 100 | ||
| Collector-Emitter Punch Through Current | ICES | 20 | V | 100 | ||
| Emitter-Base Leakage Current | IEBO | 5 | V | 100 | ||
| DC Current Gain (VCE=1V, IC=100mA) | HFE1 | 85 | 400 | |||
| DC Current Gain (VCE=1V, IC=800mA) | HFE2 | 40 | ||||
| Collector-Emitter Saturation Voltage (IC=800mA, IB=80mA) | VCE(sat) | V | 0.5 | |||
| Base-Emitter Saturation Voltage (IC=800mA, IB=80mA) | VBE(sat) | V | 1.2 | |||
| Transition Frequency (VCE=10V, IC=50mA) | fT | MHz | 100 | |||
| Output Capacitance (VCB=10V, IE=0, f=1MHZ) | Cob | pF | 13 | |||
| Collector Current | IC | 1500 | mA | |||
| Power Dissipation (Ta=25) | PC(Ta=25) | 500 | mW | |||
| Thermal Resistance Junction-Ambient | RJA | 250 | /W | |||
| Junction and Storage Temperature | TJ,Tstg | -55 to +150 |
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