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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 200nA |
| Pd - Power Dissipation: | 300mW |
| Transition frequency(fT): | 150MHz |
| type: | NPN |
| Current - Collector(Ic): | 500mA |
| Collector - Emitter Voltage VCEO: | 25V |
| Operating Temperature: | -55℃~+150℃@(Tj) |
| Description: | Bipolar (BJT) Transistor NPN 25V 500mA 150MHz 300mW Surface Mount SOT-23 |
| Mfr. Part #: | S9013 |
| Model Number: | S9013 |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The S9013 is a general-purpose NPN silicon transistor designed for various electronic applications. It offers high collector current capability, excellent hFE linearity, and is complementary to the S9012 transistor. Its robust performance makes it suitable for a wide range of circuit designs.
| Characteristic | Symbol | Min | Max | Unit | Conditions |
|---|---|---|---|---|---|
| CollectorEmitter Voltage | VCEO | 25 | Vdc | ||
| CollectorBase Voltage | VCBO | 40 | Vdc | ||
| EmitterBase Voltage | VEBO | 5.0 | Vdc | ||
| Collector Current Continuous | IC | 500 | mAdc | ||
| Total Device Dissipation FR5 Board | PD | 300 | mW | TA = 25C | |
| Junction and Storage Temperature | TJ,Tstg | -55 | +150 | C | |
| CollectorEmitter Breakdown Voltage | V(BR)CEO | 25 | Vdc | IC = 1.0 mAdc, IB = 0 | |
| CollectorBase Breakdown Voltage | V(BR)CBO | 40 | Vdc | IC = 100 Adc, IE = 0 | |
| EmitterBase Breakdown Voltage | V(BR)EBO | 5.0 | Vdc | IE = 100 Adc, IC = 0 | |
| Collector cut-off current | ICBO | 0.1 | uAdc | VCB= 40 Vdc, IE = 0 | |
| Collector cut-off current | IEC | 0.1 | uAdc | VCE = 20 Vdc, IB = 0 | |
| Emitter cut-off current | IEBO | 0.1 | uAdc | VEB = 5 Vdc, IC = 0 | |
| CurrentGain Bandwidth Product | fT | 150 | MHz | IC = 20mAdc, VCE= 6.0Vdc, f =30MHz | |
| DC Current Gain | hFE | 120 | 400 | IC = 50 mAdc, VCE = 1 Vdc | |
| CollectorEmitter Saturation Voltage | VCE(sat) | 0.6 | Vdc | IC = 500 mAdc, IB = 50 mAdc | |
| BaseEmitter Saturation Voltage | VBE(sat) | 1.2 | Vdc | IC = 500 mAdc, IB = 50 mAdc | |
| Base-emitter voltage | VBE | 0.7 | V | VCB=1V,IC=10mA | |
| Collector output capacitance | Cob | 8.0 | pF | VCB = 6.0Vdc, IE = 0, f = 1.0 MHz |
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