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Plastic Encapsulated Goodwork MJE172 Transistor Offering Low Current High Speed Switching Capability

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 7V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 12.5W
Transition frequency(fT): 50MHz
type: PNP
Current - Collector(Ic): 3A
Collector - Emitter Voltage VCEO: 80V
Operating Temperature: -55℃~+150℃@(Tj)
Description: Bipolar (BJT) Transistor PNP 80V 3A 50MHz 12.5W Through Hole TO-126
Mfr. Part #: MJE172
Model Number: MJE172
Package: TO-126
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Plastic Encapsulated Goodwork MJE172 Transistor Offering Low Current High Speed Switching Capability

Product Overview

The MJE172 is a PNP TO-126 plastic-encapsulated transistor designed for low power audio amplification and low current, high-speed switching applications. It features high current output up to -3A, low saturation voltage, and is a complement to the MJE182.

Product Attributes

  • Brand: Not Specified
  • Origin: Not Specified
  • Material: Plastic-Encapsulate
  • Color: Not Specified
  • Certifications: Not Specified

Technical Specifications

ParameterSymbolConditionsMinTypMaxUnit
Collector-Base Breakdown VoltageBVCBOIC = -100A, IE = 0-100V
Collector-Emitter Breakdown VoltageBVCEOIC = -1mA, IB = 0-80V
Emitter-Base Breakdown VoltageBVEBOIE = -100A, IC = 0-7V
Collector Cut-off CurrentICBOVCB =-100V, IB = 0-0.1A
Emitter Cut-off CurrentIEBOVEB = 7V, IC = 00.1A
DC Current GainhFEVCE=-1V, IC= -100mA50250
VCE=-1V, IC= -500mA30
VCE=-1V, IC= -1.5A12
Collector-Emitter Saturation VoltageVCE(sat)IC = -500mA, IB = -50mA-0.3V
IC = -1.5A, IB = -150mA-0.9
IC = -3A, IB = -600mA-1.7
Base-Emitter Saturation VoltageVBE(sat)IC = -1.5A, IB = -150mA-1.5V
IC = -3A, IB = -600mA-2.0
Base-Emitter On VoltageVBE(on)VCE=-1V, IC= -500mA-1.2V
Transition FrequencyfTVCE = -10V, IB = -100mA50MHz
Output CapacitanceCobVCB = -10V,IE = 0,f=1MHz50pF

2410121615_GOODWORK-MJE172_C22466879.pdf

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