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Electronic Switching Component GOODWORK BC857B PNP Transistor Designed for AF Amplifier Applications

Categories Single Bipolar Transistors
Emitter-Base Voltage(Vebo): 5V
Current - Collector Cutoff: 100nA
Pd - Power Dissipation: 225mW
Transition frequency(fT): 100MHz
Current - Collector(Ic): 100mA
Collector - Emitter Voltage VCEO: 45V
Description: Bipolar (BJT) Transistor 0.1A 100MHz 225mW Surface Mount SOT-23
Mfr. Part #: BC857B
Model Number: BC857B
Package: SOT-23
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Electronic Switching Component GOODWORK BC857B PNP Transistor Designed for AF Amplifier Applications

Product Overview

Ideally suited for automatic insertion, these PNP transistors are designed for switching and AF amplifier applications. They offer reliable performance across various operating conditions.

Product Attributes

  • Brand: Not specified
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified
  • Certifications: Not specified

Technical Specifications

ParameterSymbolBC856BC857BC858Unit
Collector-Base VoltageVCBO-80-50-30V
Collector-Emitter VoltageVCEO-65-45-30V
Emitter-Base VoltageVEBO-5V
Collector Current ContinuousIC-.1A
Collector Power DissipationPC225mW
Junction TemperatureTJ150
Storage TemperatureTstg-65+150
Collector-base breakdown voltageVCBO-80-50-30V
Collector-emitter breakdown voltageVCEO-65-45-30V
Emitter-base breakdown voltageVEBO-5V
Collector cut-off currentICBO-0.1-0.1-0.1A
Collector cut-off currentICEO-0.1-0.1-0.1A
Emitter cut-off currentIEBO-0.1A
DC current gain (hFE)hFE125-475125-475125-475
DC current gain (hFE)hFE220-800220-800220-800
Collector-emitter saturation voltageVCE(sat)-0.5V
Base-emitter saturation voltageVBE(sat)-1.1V
Transition frequencyfT100MHz
Collector capacitanceCob4.5pF

2504101957_GOODWORK-BC857B_C46962155.pdf

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