| Inverter Part (each MOSFET) | Drain-Source Voltage (VDSS) | | 500 | V |
| Drain Current, Continuous (ID) | TC = 25C | 5.0 | A |
| Pulse Current, Peak (IDP) | TC = 25C, Less than 100us | 10.0 | A |
| Current, Rms (IDRMS) | TC = 80C, FPWM <20KHz | 0.6 | Arms |
| Maximum Power Dissipation (PD) | TC = 25C | 14 | W |
| Static Drain-Source Turn-On Resistance (RDS(on)) | VCC = VBS = 15V, VIN = 5V, ID =2.5A | 1.8 (Typ) | |
| Control Part (each HVIC) | Control Supply Voltage (VCC) | Applied between VCC and COM | 20 | V |
| High-side Bias Voltage (VBS) | Applied between VB and VS | 20 | V |
| Input Signal Voltage (VIN) | Applied between VIN and COM | -0.3~VCC+0.3 | V |
| Bootstrap Diode Part | Maximum Repetitive Reverse Voltage (VRRMB) | | 500 | V |
| Forward Current (IFB) | TC= 25C | 0.25 | A |
| Total System | Operating Junction Temperature (TJ) | | -40~150 | C |
| Storage Temperature (TSTG) | | -40~150 | C |
| Isolation Voltage (VISO) | 60Hz, Sinusoidal, 1 minute, Connect Pins to Heat-Sink Plate | 1500 | Vrms |
| Junction to Case Thermal Resistance (RJC) | Each MOSFET under Inverter Operating Condition | 7.1 | C/W |
| Recommended Operating Conditions | Supply Voltage (VPN) | Applied between P and N | - 300 400 | V |
| Control Supply Voltage (VCC) | Applied between VCC and COM | 10 18.5 | V |
| High-Side Bias Voltage (VBS) | Applied between VBand VS | 10 18.5 | V |
| Electrical Characteristics (Inverter Part) | Drain - Source Breakdown Voltage (BVDSS) | VGS= 0 V, ID = 250 uA | 500 | V |
| Zero Gate Voltage Drain Current (IDSS) | VGS = 0 V, VDS = 500 V | - 1 | uA |
| Electrical Characteristics (Control Part) | Quiescent VCC Supply Current (IQCC) | VCC = 15V VIN= 0V Applied between VCC and COM | - 100 220 | uA |
| Low-side UVLO threshold (VCCD) | VCC Under-Voltage Protection Detection Level | - 7.7 | V |
| Electrical Characteristics (Bootstrap Diode) | Forward voltage (VF BSD) | IF = 0.1 A, TC = 25C | - 2.8 | V |
| Reverse Recovery Time (trrB) | IF = 0.1 A, TC = 25C | - 80 | ns |