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sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices

Categories	TRIACs
Holding Current (Ih):	190uA
Current - Gate Trigger(Igt):	15uA
Voltage - On State(Vtm):	2.2V
Average Gate Power Dissipation (PG(AV)):	-
Current - On State(It(RMS)):	4A
Peak off - state voltage(Vdrm):	400V
Current - Surge(Itsm@f):	20A@60Hz
Operating Temperature:	-40℃~+110℃
Description:	400V 4A Through Hole TO-225-3
Mfr. Part #:	C106D1G
Model Number:	C106D1G
Package:	TO-225-3

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Hefei Purple Horn E-Commerce Co., Ltd.

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sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices

Product Overview

The C106 Series Sensitive Gate Silicon Controlled Rectifiers are glassivated PNPN devices designed for high-volume consumer applications. They are suitable for temperature, light, and speed control, process and remote control, and warning systems where reliable operation is crucial. Key features include glassivated surface for reliability, economical pricing, practical triggering and holding characteristics, and a flat, rugged Thermopad construction for low thermal resistance and high heat dissipation. These devices are PbFree and offer sensitive gate triggering.

Product Attributes

Brand: Semiconductor Components Industries, LLC (onsemi)
Certifications: PbFree Devices

Technical Specifications

Characteristic	Symbol	C106B	C106D, C106D1*	C106M, C106M1*	Unit	Notes
Peak Repetitive OffState Voltage	VDRM, VRRM	200	400	600	V	Sine Wave, 5060 Hz, RGK = 1 k, TC = 40 to 110C
OnState RMS Current	IT(RMS)	4.0			A	180 Conduction Angles, TC = 80C
Average OnState Current	IT(AV)	2.55			A	180 Conduction Angles, TC = 80C
Peak NonRepetitive Surge Current	ITSM	20			A	1/2 Cycle, Sine Wave, 60 Hz, TJ = +25C
Circuit Fusing Considerations	I2t	1.65			As	t = 8.3 ms
Forward Peak Gate Power	PGM	0.5			W	Pulse Width 1.0 s, TC = 80C
Forward Average Gate Power	PG(AV)	0.1			W	Pulse Width 1.0 s, TC = 80C
Forward Peak Gate Current	IGM	0.2			A	Pulse Width 1.0 s, TC = 80C
Operating Junction Temperature Range	TJ	40 to +110			C
Storage Temperature Range	Tstg	40 to +150			C
Mounting Torque					6.0	in. lb.	Note 2
Thermal Resistance, JunctiontoCase	RJC	3.0			C/W
Thermal Resistance, JunctiontoAmbient	RJA	75			C/W
Maximum Lead Temperature for Soldering Purposes	TL	260			C	1/8 in. from Case for 10 Seconds
Peak Repetitive Forward or Reverse Blocking Current	IDRM, IRRM	10 / 100			A / mA	TJ = 25C / 110C, VAK = Rated VDRM or VRRM, RGK = 1 k
Peak Forward OnState Voltage	VTM	2.2			V	ITM = 4 A, Note 3
Gate Trigger Current (Continuous dc)	IGT	15 / 200	35 / 500		A	TJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4
Peak Reverse Gate Voltage	VGRM	6.0			V	IGR = 10 A
Gate Trigger Voltage (Continuous dc)	VGT	0.4 / 0.60 / 0.8	0.5 / 0.75 / 1.0		V	TJ = 25C / 40C, VAK = 6 Vdc, RL = 100 , Note 4
Gate NonTrigger Voltage	VGD	0.2			V	VAK = 12 V, RL = 100 , TJ = 110C, Note 4
Latching Current	IL	0.20 / 5.0	0.35 / 7.0		mA	TJ = 25C / 40C, VAK = 12 V, IG = 20 mA, RGK = 1 k, Note 4
Holding Current	IH	0.19 / 3.0	0.33 / 6.0	0.07 / 2.0	mA	TJ = 25C / 40C / +110C, VD = 12 Vdc, RGK = 1 k, Note 4
Critical RateofRise of OffState Voltage	dv/dt	8.0			V/s	VAK = Rated VDRM, Exponential Waveform, RGK = 1 k, TJ = 110C

2410122031_onsemi-C106D1G_C184428.pdf

sensitive gate silicon controlled rectifier onsemi C106D1G designed for consumer electronic devices

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