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Glass passivated LangJie DB3 bidirectional trigger diode providing breakover voltage performance in circuits

Categories DIACs, SIDACs
Breakover Voltage VBO(Range Value): 28V~36V
Breakover Current (Ibo): 100uA
Rise Time(tr): 1.5us
Dynamic Breakover Voltage: 5V
Breakover Voltage VBO(Typ): 32V
Leak Current: 10uA
Description: 28V~36V 100uA 1.5us 32V DO-41 DIACs, SIDACs RoHS
Mfr. Part #: DB3
Model Number: DB3
Package: DO-41
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Glass passivated LangJie DB3 bidirectional trigger diode providing breakover voltage performance in circuits

Product Overview

The AXIAL BIDIRECTIONAL TRIGGER DIOEE DB3 THRU DB6 are voltage-controlled current-limiting devices designed for general purpose applications. Featuring versions with breakover voltages from 32V to 60V, these diodes offer low breakover current and high reliability due to glass passivation, ensuring parameter stability and protection against junction contamination. They are designed for high-temperature soldering up to 260 for 10 seconds under tension.

Product Attributes

  • Brand: CHANGZHOU LANGJIE ELECTRONICS CO.,LTD
  • Origin: China
  • Material: Transfer molded plastic case with UL94V-0 rate flame retardant epoxy
  • Lead: Plated axial lead, solderable per MIL-STD-202E method 208C
  • Certifications: UL94V-0

Technical Specifications

ModelBVO (V)Breakover Voltage (V) MinBreakover Voltage (V) TypBreakover Voltage (V) MaxDynamic Breakover Voltage (V) MinOutput Voltage (V) MinBreakover Current (A) MaxLeakage Current (A) MaxRepetitive Peak On-State Current (A)
DB33228323655100102.0 (TP=20S F=100HZ)
DB34343034385550102.0 (TP=20S F=100HZ)
DB44035404555100102.0 (TP=20S F=100HZ)
DB660566070105100101.6 (TP=20S F=100HZ)
ParameterValueUnits
Power dissipation on printed circuit (L=10mm) TA=65150mW
Storage and operating junction temperature range-40 to +125
Junction to ambient thermal resistance400/W
Junction-leads thermal resistance150/W
Rise time (diagram 3)1.5S

2409302201_LangJie-DB3_C7450409.pdf

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