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Silicon bidirectional thyristors DIODES SD09A240E engineered for operation in industrial electronics

Categories	SCRs
Description:	SCRs RoHS
Mfr. Part #:	SD09A240E
Model Number:	SD09A240E

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Silicon bidirectional thyristors DIODES SD09A240E engineered for operation in industrial electronics

Product Overview

The SD09A-E Series are high voltage silicon bidirectional thyristors (SIDACs) designed for applications requiring high pulse current capability and reliable operation. Featuring glass passivation, these devices offer excellent performance for strobes, flashers, ignitors, and high voltage regulators. They are also used to trigger gates of SCR's and Triacs.

Product Attributes

Brand: LITE-ON SEMICONDUCTOR
Product Type: Sidac High Voltage Sillicon Bidirectional Thyristors
Certifications: UL Recognition File # E219635, Component in accordance to RoHs 2002/95/EC
Case: JEDEC DO-41 molded plastic
Terminals: Lead Free Plating (Matte Tin Finish)
Weight: 0.012 ounces, 0.34 grams

Technical Specifications

Rating Symbol	Value	Unit	Model(s)	Notes
VDRM, VRRM	+90 / -90	Volts	SD09A105E, SD09A120E, SD09A130E, SD09A160E	Peak Repetitive Off State Voltage
VDRM, VRRM	+180 / -180	Volts	SD09A220E, SD09A240E	Peak Repetitive Off State Voltage
IT(RMS)	± 0.9	Amp	All	On-State RMS Current (TL = 80 , Lead Length=3/8, All Conduction Angles)
ITSM	± 4.0	Amps	All	Peak Non-Repetitive Surge Current (60 Hz One Cycle Sine Wave, Tj = 125)
TJ	-40 to +125		All	Operating Junction Temperature Range
Tstg	-40 to +150		All	Storage Temperature Range
RthJL	40	/W	All	Thermal Resistance - Junction to Lead (Lead Length = 3/8 )
TL	260		All	Maximum Lead Solder Temperature (Lead Length 1/16 from Case, 10s Max)
IDRM	---- to 5	uA	All	Peak Repetitive Forward or Reverse Blocking Current (50 to 60 Hz Sine Wave)
VTM	---- to 1.5	Volts	All	Peak On-State Voltage (ITM=1A Peak @Tp 300 us, Duty Cycle 2%)
VBO	95 to 110	Volts	SD09A105E	Breakover Voltage (IBO= 35uA)
VBO	110 to 130	Volts	SD09A120E	Breakover Voltage (IBO= 35uA)
VBO	120 to 140	Volts	SD09A130E	Breakover Voltage (IBO= 35uA)
VBO	150 to 170	Volts	SD09A160E	Breakover Voltage (IBO= 35uA)
VBO	210 to 230	Volts	SD09A220E	Breakover Voltage (IBO= 35uA)
VBO	220 to 250	Volts	SD09A240E	Breakover Voltage (IBO= 35uA)
IH	---- to 100	mA	All	Dynamic Holding Current (Sine Wave, 50 to 60 Hz, RL=100 Ohm)
Rs	0.1 to ----	k	All	Switching Resistance (Sine Wave, 50 to 60 Hz)
di/dt	---- to 120	A/us	All	Critical Rate of Rise of On-State Current (IPK = 130 A, Pulse Width = 10 us)

2411071424_DIODES-SD09A240E_C17584746.pdf

Silicon bidirectional thyristors DIODES SD09A240E engineered for operation in industrial electronics

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