Low Level Triggering Surface Mount Thyristor Littelfuse MCR8DCMT4G for Temperature and Speed Control

Categories	SCRs
Holding Current (Ih):	30mA
Current - Gate Trigger(Igt):	15uA
Voltage - On State(Vtm):	1.8V
Current - On State(It(RMS)):	8A
Peak off - state voltage(Vdrm):	600V
SCR Type:	1 SCR
Gate Trigger Voltage (Vgt):	1V
Operating Temperature:	-40℃~+125℃
Description:	30mA 15uA 600V 1 SCR TO-252-2(DPAK) SCRs RoHS
Mfr. Part #:	MCR8DCMT4G
Model Number:	MCR8DCMT4G
Package:	TO-252-2(DPAK)

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Product Details
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Low Level Triggering Surface Mount Thyristor Littelfuse MCR8DCMT4G for Temperature and Speed Control

Product Overview

The MCR8DCM and MCR8DCN are surface mount thyristors designed for high volume, low cost, industrial and consumer applications. They feature a small size, passivated die for reliability, and low level triggering and holding characteristics. Available in two package styles, these devices are suitable for motor control, process control, and temperature, light, and speed control applications. They meet UL 94 V-0 flammability standards and offer high ESD ratings.

Product Attributes

Brand: Littelfuse
Certifications: UL 94 V-0
Lead Free Options Available

Technical Specifications

Rating	Symbol	MCR8DCM	MCR8DCN	Unit	Notes
Peak Repetitive Off-State Voltage	VDRM, VRRM	600	800	V	1
On-State RMS Current	IT (RMS)	8.0	8.0	A	TC = 105C
Average On-State Current	IT(AV)	5.1	5.1	A	TC = 105C
Peak Non-Repetitive Surge Current	ITSM	80	80	A	1/2 Cycle, 60 Hz, TJ = 110C
Circuit Fusing Consideration	I2t	26	26	Asec	t = 8.3 ms
Forward Peak Gate Power	PGM	5.0	5.0	W	Pulse Width 10 sec, TC = 105C
Forward Average Gate Power	PGM (AV)	0.5	0.5	W	t = 8.3 msec, TC = 105C
Forward Peak Gate Current	IGM	2.0	2.0	A	Pulse Width 1.0 sec, TC= 105C
Operating Junction Temperature Range	TJ	-40 to 125	-40 to 125	C
Storage Temperature Range	Tstg	-40 to 150	-40 to 150	C
Thermal Resistance, Junction-to-Case	RJC	2.2	2.2	C/W
Thermal Resistance, Junction-to-Ambient	RJA	88	88	C/W	Surface mounted on minimum recommended pad size.
Thermal Resistance, Junction-to-Ambient	RJA	80	80	C/W	Note 2
Maximum Device Temperature for Soldering	TL	260	260	C	Note 3
Peak Repetitive Forward or Reverse Blocking Current	IDRM, IRRM	0.01	0.01	mA	VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 25C
Peak Repetitive Forward or Reverse Blocking Current	IDRM, IRRM	5.0	5.0	mA	VAK = Rated VDRM or VRRM, RGK = 1.0 k, TJ = 110C
Critical Rate of Rise of Off-State Voltage	dv/dt	50	50	V/s	VAK = Rated VDRM, Gate Open, TJ = 125C
Peak On-State Voltage	VTM	1.8	1.8	V	ITM = 16 A, Pulse Test
Gate Trigger Current (Continuous dc)	IGT	7.0	7.0	A	VAK = 12 Vdc, RL = 100 , TJ = 25C
Gate Trigger Current (Continuous dc)	IGT	15	15	A	VAK = 12 Vdc, RL = 100 , TJ = -40C
Gate Trigger Current (Continuous dc)	IGT	30	30	A	VAK = 12 Vdc, RL = 100 , TJ = 125C
Gate Trigger Voltage (Continuous dc)	VGT	0.65	0.65	V	VD = 12 V, RL = 100 , TJ = 25C
Gate Trigger Voltage (Continuous dc)	VGT	1.0	1.0	V	VD = 12 V, RL = 100 , TJ = -40C
Gate Trigger Voltage (Continuous dc)	VGT	2.0	2.0	V	VD = 12 V, RL = 100 , TJ = 125C
Holding Current	IH	22	22	mA	TJ = 25C
Holding Current	IH	30	30	mA	TJ = -40C
Holding Current	IH	60	60	mA	TJ = 125C
Latching Current	IL	22	22	mA	TJ = 25C
Latching Current	IL	30	30	mA	TJ = -40C
Latching Current	IL	60	60	mA	TJ = 125C

2411261530_Littelfuse-MCR8DCMT4G_C151667.pdf

Low Level Triggering Surface Mount Thyristor Littelfuse MCR8DCMT4G for Temperature and Speed Control

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