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Compact SOT package dual digital transistor inverter interface driver ROHM IMD3AT108 general purpose device

Categories	Single, Pre-Biased Bipolar Transistors
Output Voltage(VO(on)):	300mV
Input Resistor:	10kΩ
Resistor Ratio:	1
Number:	-
Collector - Emitter Voltage VCEO:	50V
Description:	Pre-Biased Bipolar Transistor (BJT) 50V 100mA 300mW Surface Mount SOT-457
Mfr. Part #:	IMD3AT108
Model Number:	IMD3AT108
Package:	SOT-457

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Compact SOT package dual digital transistor inverter interface driver ROHM IMD3AT108 general purpose device

Product Overview

The EMD3/UMD3N/IMD3A series are general-purpose dual digital transistors designed for inverter, interface, and driver applications. These devices integrate both NPN (EMD3/UMD3N) and PNP (IMD3A) transistor elements within compact SOT packages (SOT-563, SOT-363, SOT-457), offering a space-saving solution. The independent transistor elements prevent interference, and their integration halves mounting costs and area. They are compatible with automatic mounting machines.

Product Attributes

Brand: ROHM
Product Series: EMD3 / UMD3N / IMD3A

Technical Specifications

Model	Package	DTr1 (NPN) VCC	DTr1 (NPN) IC(MAX.)	DTr1 (NPN) R1	DTr1 (NPN) R2	DTr2 (PNP) VCC	DTr2 (PNP) IC(MAX.)	DTr2 (PNP) R1	DTr2 (PNP) R2	Packaging	Taping Code	Reel Size (mm)	Tape Width (mm)	Basic Ordering Unit (pcs)	Marking
EMD3	SOT-563 (EMT6)	50V	100mA	10k	10k	-50V	-100mA	10k	10k	SOT-563	T2R	180	8	8000	D3
UMD3N	SOT-363 (UMT6)	50V	100mA	10k	10k	-50V	-100mA	10k	10k	SOT-363	TR	180	8	3000	D3
IMD3A	SOT-457 (SMT6)	50V	100mA	10k	10k	-50V	-100mA	10k	10k	SOT-457	T108	180	8	3000	D3

Absolute Maximum Ratings (Ta = 25C)

Parameter	Symbol	DTr1(NPN) Unit	DTr2(PNP) Unit
Supply voltage	VCC	50 V	-50 V
Input voltage	VIN	-10 to 40 V	-40 to 10 V
Output current	IO	50 mA	-50 mA
Collector current	IC(MAX)*1	100 mA	-100 mA
Power dissipation (EMD3/UMD3N)	PD23	150 mW/Total (120mW per element max)
Power dissipation (IMD3A)	PD24	300 mW (200mW per element max)
Junction temperature	Tj	150
Range of storage temperature	Tstg	-55 to +150

Electrical Characteristics (Ta = 25C)

For DTr1(NPN)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input voltage (off)	VI(off)	VCC = 5V, IO = 100A	-	-	0.5	V
Input voltage (on)	VI(on)	VO = 0.3V, IO = 10mA	3.0	-	-	V
Output voltage (on)	VO(on)	IO = 10mA, II = 0.5mA	-	100	300	mV
Input current	II	VI = 5V	-	-	880	A
Output current (off)	IO(off)	VCC = 50V, VI = 0V	-	-	500	nA
DC current gain	GI	VO = 5V, IO = 5mA	30	-	-	-
Input resistance	R1	-	-	7	13	k
Resistance ratio	R2/R1	-	0.8	1.0	1.2	-
Transition frequency	fT*1	VCE = 10V, IE = -5mA, f = 100MHz	-	250	-	MHz

For DTr2(PNP)

Parameter	Symbol	Conditions	Min.	Typ.	Max.	Unit
Input voltage (off)	VI(off)	VCC = -5V, IO = -100A	-	-	-0.5	V
Input voltage (on)	VI(on)	VO = -0.3V, IO = -10mA	-3.0	-	-	V
Output voltage (on)	VO(on)	IO = -10mA, II = -0.5mA	-	-100	-300	mV
Input current	II	VI = -5V	-	-	-880	A
Output current (off)	IO(off)	VCC = -50V, VI = 0V	-	-	-500	nA
DC current gain	GI	VO = -5V, IO = -5mA	30	-	-	-
Input resistance	R1	-	-	7	13	k
Resistance ratio	R2/R1	-	0.8	1.0	1.2	-
Transition frequency	fT*1	VCE = -10V, IE = 5mA, f = 100MHz	-	250	-	MHz

*1 Characteristics of built-in transistor
*2 Each terminal mounted on a reference land
*3 120mW per element must not be exceeded.
*4 200mW per element must not be exceeded.

Applications

INVERTER
INTERFACE
DRIVER

2007151837_ROHM-IMD3AT108_C703622.pdf

Compact SOT package dual digital transistor inverter interface driver ROHM IMD3AT108 general purpose device

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