power semiconductor device Jilin Sino-Microelectronics 3DD4251T with high breakdown voltage and current capability

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	15V
Current - Collector Cutoff:	5uA
Pd - Power Dissipation:	1W
Current - Collector(Ic):	500mA
Collector - Emitter Voltage VCEO:	400V
Description:	Bipolar (BJT) Transistor 400V 0.5A 1W Through Hole TO-92-3
Mfr. Part #:	3DD4251T
Model Number:	3DD4251T
Package:	TO-92-3

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power semiconductor device Jilin Sino-Microelectronics 3DD4251T with high breakdown voltage and current capability

Product Overview

The 3DD4251T is a high-performance semiconductor device designed for various power applications. It offers high breakdown voltage, high current capability, high switching speed, and high reliability, making it suitable for energy-saving lamps, electronic ballasts, high-frequency switching power supplies, high-frequency power transforms, and general power amplifier circuits. This product is RoHS compliant.

Product Attributes

Brand: Jilin Sino-microelectronics Co., Ltd.
Certifications: RoHS
Material: Not specified
Color: Not specified
Origin: Not specified

Technical Specifications

Order Code	Marking	Package	Halogen	Reel/Bag
3DD4251T-TJ-A	4251T	TO-92-FJ	Halogen	Reel
3DD4251T-TJ-AR	4251T	TO-92-FJ	Halogen-Free	Reel
3DD4251T-TJ-C	4251T	TO-92-FJ	Halogen	Bag
3DD4251T-TJ-CR	4251T	TO-92-FJ	Halogen-Free	Bag
3DD4251T-T-A	4251T	TO-92	Halogen	Reel
3DD4251T-T-AR	4251T	TO-92	Halogen-Free	Reel
3DD4251T-T-C	4251T	TO-92	Halogen	Bag
3DD4251T-T-CR	4251T	TO-92	Halogen-Free	Bag
3DD4251T-T1-A	4251T	TO-92-F1	Halogen	Reel
3DD4251T-T1-AR	4251T	TO-92-F1	Halogen-Free	Reel
3DD4251T-T1-C	4251T	TO-92-F1	Halogen	Bag
3DD4251T-T1-CR	4251T	TO-92-F1	Halogen-Free	Bag
3DD4251T-TJ1-A	4251T	TO-92-FJ-F1	Halogen	Reel
3DD4251T-TJ1-AR	4251T	TO-92-FJ-F1	Halogen-Free	Reel
3DD4251T-TJ1-C	4251T	TO-92-FJ-F1	Halogen	Bag
3DD4251T-TJ1-CR	4251T	TO-92-FJ-F1	Halogen-Free	Bag

Parameter	Symbol	Value (min)	Value (typ)	Value (max)	Unit	Test Conditions
Collector-Emitter Voltage (VBE=0)	VCES	-	-	700	V	-
Collector-Emitter Voltage (IB=0)	VCEO	400	440	-	V	Ic=10mA,IB=0
Emitter-Base Voltage	VEBO	9	15	-	V	IE=1mA,Ic=0
Collector Current (DC)	IC	-	-	0.5	A	-
Collector Current (pulse)	ICP	-	-	1	A	-
Total Dissipation (TO-92/TO-92-FJ)	PC	-	-	1	W	-
Junction Temperature	Tj	-	-	150		-
Storage Temperature	Tstg	-55	-	+150		-
Breakdown Voltage CEO	V(BR)CEO	400	440	-	V	Ic=10mA,IB=0
Breakdown Voltage CBO	V(BR)CBO	700	780	-	V	Ic=1mA,IE=0
Breakdown Voltage EBO	V(BR)EBO	9	15	-	V	IE=1mA,Ic=0
Collector Cut-off Current	ICBO	-	-	5	A	VCB=700V, IE=0
Collector Cut-off Current	ICEO	-	-	10	A	VCE=400V,IB=0
Emitter Cut-off Current	IEBO	-	-	5	A	VEB=9V, IC=0
DC Current Gain	hFE	19	-	25	-	VCE=10V, IC=20mA
Collector-Emitter Saturation Voltage	VCE(sat)	-	0.2	1.0	V	IC=0.1A, IB=10mA
Base-Emitter Saturation Voltage	VBE(sat)	-	0.8	1.2	V	IC=0.05A, IB=5mA
Switching Time	ts	-	1.0-1.5-2.0	-	S	IC=0.1A
Thermal Resistance Junction Ambient	Rth(j-a)	-	-	125	/W	TO-92 /TO-92-FJ

2409280200_Jilin-Sino-Microelectronics-3DD4251T_C3020069.pdf

power semiconductor device Jilin Sino-Microelectronics 3DD4251T with high breakdown voltage and current capability

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