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Transistor Guangdong Hottech BC858C plastic encapsulated model designed for switching and amplifier

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	5V
Current - Collector Cutoff:	100nA
Pd - Power Dissipation:	200mW
Transition frequency(fT):	100MHz
type:	PNP
Number:	1 PNP
Current - Collector(Ic):	100mA
Collector - Emitter Voltage VCEO:	30V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor PNP 30V 0.1A 100MHz 0.2W Surface Mount SOT-23
Mfr. Part #:	BC858C
Model Number:	BC858C
Package:	SOT-23

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Transistor Guangdong Hottech BC858C plastic encapsulated model designed for switching and amplifier

Product Overview

Plastic-encapsulated transistors ideally suited for automatic insertion, designed for switching and AF amplifier applications. Available in various models including BC856, BC857, and BC858 series, offering distinct voltage and current ratings.

Product Attributes

Brand: GUANGDONG HOTTECH INDUSTRIAL CO., LTD
Material: Plastic-Encapsulate
Package: SOT-23

Technical Specifications

Parameter	Symbol	Model	Test Conditions	Value	Unit
Collector-Base Voltage	VCBO	BC856	TA=25	-80	V
Collector-Base Voltage	VCBO	BC857	TA=25	-50	V
Collector-Base Voltage	VCBO	BC858	TA=25	-30	V
Collector-Emitter Voltage	VCEO	BC856	TA=25	-65	V
Collector-Emitter Voltage	VCEO	BC857	TA=25	-45	V
Collector-Emitter Voltage	VCEO	BC858	TA=25	-30	V
Emitter-Base Voltage	VEBO	All	TA=25	-5	V
Collector Current - Continuous	IC	All	TA=25	-0.1	A
Collector Power Dissipation	PC	All	TA=25	0.2	W
Junction Temperature	TJ	All	TA=25	150	C
Storage Temperature	Tstg	All	TA=25	-55 to +150	C
Collector-base breakdown voltage	VCBO	BC856	IC= -10A, IE=0	-80	V
Collector-base breakdown voltage	VCBO	BC857	IC= -10A, IE=0	-50	V
Collector-base breakdown voltage	VCBO	BC858	IC= -10A, IE=0	-30	V
Collector-emitter breakdown voltage	VCEO	BC856	IC= -10mA, IB=0	-65	V
Collector-emitter breakdown voltage	VCEO	BC857	IC= -10mA, IB=0	-45	V
Collector-emitter breakdown voltage	VCEO	BC858	IC= -10mA, IB=0	-30	V
Emitter-base breakdown voltage	VEBO	All	IE= -1A, IC=0	-5	V
Collector cut-off current	ICBO	BC856	VCB= -70 V , IE=0	-0.1	A
Collector cut-off current	ICBO	BC857	VCB= -45 V , IE=0	-0.1	A
Collector cut-off current	ICBO	BC858	VCB= -25 V , IE=0	-0.1	A
Collector cut-off current	ICEO	BC856	VCE= -60 V , IB=0	-0.1	A
Collector cut-off current	ICEO	BC857	VCE= -40 V , IB=0	-0.1	A
Collector cut-off current	ICEO	BC858	VCE= -25 V , IB=0	-0.1	A
Emitter cut-off current	IEBO	All	VEB= -5 V , IC=0	-0.1	A
DC current gain	hFE	BC856A, 857A,858A	VCE= -5V, IC= -2mA	125-250
DC current gain	hFE	BC856B, 857B,858B	VCE= -5V, IC= -2mA	220-475
DC current gain	hFE	BC857C,BC858C	VCE= -5V, IC= -2mA	420-800
Collector-emitter saturation voltage	VCE(sat)	All	IC=-100mA, IB= -5 mA	-0.5	V
Base-emitter saturation voltage	VBE(sat)	All	IC= -100mA, IB= -5mA	-1.1	V
Transition frequency	fT	All	VCE= -5 V, IC= -10mA, f=100MHz	100	MHz
Collector capacitance	Cob	All	VCB=-10V, f=1MHz	4.5	pF

2410122025_Guangdong-Hottech-BC858C_C181149.pdf

Transistor Guangdong Hottech BC858C plastic encapsulated model designed for switching and amplifier

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