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| Categories | Single Bipolar Transistors |
|---|---|
| Emitter-Base Voltage(Vebo): | 5V |
| Current - Collector Cutoff: | 100nA |
| Pd - Power Dissipation: | 200mW |
| Transition frequency(fT): | 300MHz |
| type: | PNP |
| Number: | 1 PNP |
| Current - Collector(Ic): | 200mA |
| Collector - Emitter Voltage VCEO: | 40V |
| Description: | Bipolar (BJT) Transistor PNP 40V 200mA 300MHz 200mW Surface Mount SOT-23 |
| Mfr. Part #: | MMBT3906 |
| Model Number: | MMBT3906 |
| Package: | SOT-23 |
| Company Info. |
| Hefei Purple Horn E-Commerce Co., Ltd. |
| Verified Supplier |
| View Contact Details |
| Product List |
The MMBT3906 is a PNP bipolar transistor designed for surface mount applications. It serves as a complementary device to the MMBT3904 and is housed in a SOT-23 package, making it suitable for compact electronic designs.
| Parameter | Symbol | Value | Unit | Conditions |
| Collector-Base Voltage | VCBO | -40 | V | |
| Collector-Emitter Voltage | VCEO | -40 | V | |
| Emitter-Base Voltage | VEBO | -5 | V | |
| Collector Current | IC | -200 | mA | |
| Collector Power Dissipation | PC | 200 | mW | |
| Thermal Resistance Junction To Ambient | RJA | 625 | C/W | |
| Junction Temperature | TJ | 150 | C | |
| Storage Temperature | TSTG | -55 ~+150 | C | |
| Collector-base breakdown voltage | V(BR)CBO | -40 | V | IC=-10uAIE=0 |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V | IC=-1mAIB=0 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10uAIC=0 |
| Collector cut-off current | ICBO | -0.1 | uA | VCB=-40V, IE=0 |
| Collector cut-off current | ICEX | -50 | nA | VCE=-30V, VBE(OFF)=-3V |
| Emitter cut-off current | IEBO | -0.1 | uA | VEB=-5V, IC=0 |
| DC current gain (hFE1) | hFE1 | 100-300 | VCE=-1V, IC=-10mA | |
| DC current gain (hFE2) | hFE2 | 60 | VCE=-1V, IC=-50mA | |
| DC current gain (hFE3) | hFE3 | 30 | VCE=-2V, IC=-100mA | |
| Collector-emitter saturation voltage | VCE(sat) | -0.3 | V | IC=-50mAIB=-5mA |
| Base-emitter saturation voltage | VBE(sat) | -0.95 | V | IC=-50mAIB=-5mA |
| Transition frequency | fT | 300 | MHz | VCE=-20V,IC=-10mA,f=100MHz |
| Delay time | td | 35 | ns | VCC=-3V, VBE(OFF)=-0.5V, IC=-10mAIB1==IB2=-1mA |
| Rise time | tr | 35 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| Storage time | tS | 225 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| Fall time | tf | 75 | ns | VCC=-3V,IC=-10mA IB1=IB2=-1mA |
| hFE Classification Rank L | 100-200 | |||
| hFE Classification Rank H | 200-300 | |||
| Marking | 2A |
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