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SOT23 Package High Diode MMBTA44 NPN Transistor Designed for Robust High Voltage Electronic Circuits

Categories	Single Bipolar Transistors
Emitter-Base Voltage(Vebo):	6V
Current - Collector Cutoff:	100nA
Pd - Power Dissipation:	350mW
Transition frequency(fT):	-
type:	NPN
Current - Collector(Ic):	200mA
Collector - Emitter Voltage VCEO:	400V
Operating Temperature:	-
Description:	Bipolar (BJT) Transistor NPN 400V 200mA 350mW Surface Mount SOT-23
Mfr. Part #:	MMBTA44
Model Number:	MMBTA44
Package:	SOT-23

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SOT23 Package High Diode MMBTA44 NPN Transistor Designed for Robust High Voltage Electronic Circuits

Product Overview

High Diode Semiconductor MMBTA44 is a NPN transistor in a SOT-23 package, designed for high voltage applications. It offers a high collector-emitter voltage of 400V and is suitable for various electronic circuits requiring robust voltage handling.

Product Attributes

Brand: High Diode Semiconductor
Package: SOT-23
Type: NPN Transistor
Complementary to: MMBTA94

Technical Specifications

Parameter	Symbol	Test Conditions	Min	Typ	Max	Unit
Collector-Base Voltage	V	400					V
Collector-Emitter Voltage	VCEO	400					V
Emitter-Base Voltage	VEBO	6					V
Collector Current	IC	200					mA
Collector Power Dissipation	PC	350					mW
Thermal Resistance Junction To Ambient	RJA	357					/W
Junction Temperature	Tj	150
Storage Temperature	Tstg	-55+150
Collector-Base Breakdown Voltage	V(BR)CBO	IC=100A, IE=0	400			V
Collector-Emitter Breakdown Voltage	V(BR)CEO*	IC=1mA, IB=0	400			V
Emitter-Base Breakdown Voltage	V(BR)EBO	IE=10A, IC=0	6			V
Collector Cut-off Current	ICBO	VCB=400V, IE=0		0.1		A
Emitter Cut-off Current	IEBO	VEB=4V, IC=0		0.1		A
DC Current Gain	hFE(1)	VCE=10V, IC=1mA	40
DC Current Gain	hFE(2)	VCE=10V, IC=10mA	50		200
DC Current Gain	hFE(3)	VCE=10V, IC=50mA	45
DC Current Gain	hFE(4)	VCE=10V, IC=100mA	40
Collector-Emitter Saturation Voltage	VCE(sat)1*	IC=1mA, IB=0.1mA		0.4		V
Collector-Emitter Saturation Voltage	VCE(sat)2*	IC=10mA, IB=1mA		0.5		V
Collector-Emitter Saturation Voltage	VCE(sat)3*	IC=50mA, IB=5mA		0.75		V
Base-Emitter Saturation Voltage	VBE(sat)*	IC=10mA, IB=1mA		0.75		V
Collector Output Capacitance	Cob	VCB=20V, IE=0, f=1MHz		7		pF
Emitter Input Capacitance	Cib	VEB=0.5V, IC=0, f=1MHz		130		pF

2410121332_High-Diode-MMBTA44_C466650.pdf

SOT23 Package High Diode MMBTA44 NPN Transistor Designed for Robust High Voltage Electronic Circuits

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